Dry etching of platinum films with TiN masks in an Ar/O 2 helicon wave plasma

Platinum thin films have been successfully patterned without fence residues using an Ar/O 2 helicon wave plasma. Photoresist and silicon oxide masks were also studied for comparison. The etch rate of the TiN mask decreases, but the etch slope increases with an increase of the oxygen concentration in...

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Veröffentlicht in:	Journal of vacuum science & technology. A, Vacuum, surfaces, and films Vacuum, surfaces, and films, 2000-01, Vol.18 (1), p.181-187
Hauptverfasser:	Chiang, Ming-Chung, Pan, Fu-Ming, Cheng, Han-Chung, Liu, Jeng-Shu, Chan, Shih-Hsiung, Wei, Ta-Chin
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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