Comprehensive modeling of the lithographic errors in laser direct write
Patterns written by laser direct write have a critical dimension (CD) bias dependence on the dose similar to other direct write methods, such as electron beam lithography, which can be explained by the exposure intensity distribution (EID) of the laser beam. In this study, a comprehensive model base...
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| Veröffentlicht in: | Journal of vacuum science and technology. B, Nanotechnology & microelectronics Nanotechnology & microelectronics, 2019-11, Vol.37 (6) |
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| Hauptverfasser: | , , |
| Format: | Artikel |
| Sprache: | eng |
| Online-Zugang: | Volltext |
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