New CH4-N2 dry etch chemistry for poly(methyl methacrylate) removal without consuming polystyrene for lamellar copolymers application

Directed self-assembly of block copolymers is one of the most promising solutions to reach sub-20 nm patterns. A critical challenge of this technique is the PMMA removal selectively to polystyrene (PS). A very high PMMA:PS selectivity (>10:1) is required to conserve a sufficient PS pattern thickn...

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Veröffentlicht in:Journal of vacuum science and technology. B, Nanotechnology & microelectronics Nanotechnology & microelectronics, 2019-05, Vol.37 (3)
Hauptverfasser: Sarrazin, Aurelien, Posseme, Nicolas, Pimenta-Barros, Patricia, Barnola, Sebastien, Tiron, Raluca, Cardinaud, Christophe
Format: Artikel
Sprache:eng
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Zusammenfassung:Directed self-assembly of block copolymers is one of the most promising solutions to reach sub-20 nm patterns. A critical challenge of this technique is the PMMA removal selectively to polystyrene (PS). A very high PMMA:PS selectivity (>10:1) is required to conserve a sufficient PS pattern thickness allowing pattern transfer to sublayers. In this paper, the authors propose a CH4-N2 chemistry allowing a full PMMA removal without PS consumption. This chemistry is based on controlling the polymerization rate by tuning the ratio between methane and di-nitrogen. Finally, the benefits of this etch chemistry have been validated on PS-b-PMMA with a lamellar configuration.
ISSN:2166-2746
2166-2754
DOI:10.1116/1.5090395