SiO 2/Si(001) studied by time-resolved valence band photoemission at MHz repetition rates: Linear and nonlinear excitation of surface photovoltage
The authors investigate the fluence and doping dependence of the surface photovoltage (SPV) shifts at SiO 2 /Si(001) interfaces by time-resolved photoelectron spectroscopy. Charge carriers are excited by pumping photon energies of h ν p u m p = 1.2 and 2.4 eV and probed by high-order harmonics of h...
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| Veröffentlicht in: | Journal of vacuum science & technology. A, Vacuum, surfaces, and films Vacuum, surfaces, and films, 2019-03, Vol.37 (2) |
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| container_title | Journal of vacuum science & technology. A, Vacuum, surfaces, and films |
| container_volume | 37 |
| creator | Kamrla, Robin Trützschler, Andreas Huth, Michael Chiang, Cheng-Tien Schumann, Frank O. Widdra, Wolf |
| description | The authors investigate the fluence and doping dependence of the surface photovoltage (SPV) shifts at SiO
2
/Si(001) interfaces by time-resolved photoelectron spectroscopy. Charge carriers are excited by pumping photon energies of
h
ν
p
u
m
p
=
1.2 and
2.4 eV and probed by high-order harmonics of
h
ν
p
r
o
b
e
=
22.6 eV at
0.2 and
0.7 MHz repetition rates. The authors observe SPV shifts of the nonbonding O
2
p state by
240 meV for SiO
2
/
p-Si and by
−
140 meV for SiO
2
/
n-Si upon pumping with
h
ν
p
u
m
p
=
1.2 eV, and their decay rate is estimated from time-resolved measurements. Moreover, the authors observe a striking pumping fluence dependence of SPV at these interfaces, which indicates charge carrier generation by both linear and nonlinear optical excitations. |
| doi_str_mv | 10.1116/1.5082188 |
| format | Article |
| fullrecord | <record><control><sourceid>scitation</sourceid><recordid>TN_cdi_scitation_primary_10_1116_1_5082188</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>scitation_primary_10_1116_1_5082188</sourcerecordid><originalsourceid>FETCH-LOGICAL-s140t-4dada83bab2ad96fc722c0857a7e8ccd2651da0f43cbf6c4f15b3754bd9882bb3</originalsourceid><addsrcrecordid>eNp9kM1KAzEUhYMoWKsL3yBLFaZNMpOZ1J0UtUKli-p6uPnTyHRSknSwPoZPbP_EnavLOZzzcTkIXVIyoJSWQzrgRDAqxBHqUc5IJjgfHaMeqfIiY5TQU3QW4wchhDFS9tD33M0wG87dFSH0Gse00s5oLNc4uYXJgom-6TZGB41plcESWo2X7z55s3AxOt9iSPh58oWDWZrk0tYJkEy8xVPXGgh422h92-yV-VQuwS7mLY6rYGGD3RE73yR4M-foxEITzcXh9tHrw_3LeJJNZ49P47tpFmlBUlZo0CByCZKBHpVWVYwpIngFlRFKaVZyqoHYIlfSlqqwlMu84oXUIyGYlHkf3ey58fejehncAsK67nyoaX1Ysl5q-1-Ykno7_V8h_wEd0HjM</addsrcrecordid><sourcetype>Enrichment Source</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>SiO 2/Si(001) studied by time-resolved valence band photoemission at MHz repetition rates: Linear and nonlinear excitation of surface photovoltage</title><source>AIP Journals Complete</source><source>Alma/SFX Local Collection</source><creator>Kamrla, Robin ; Trützschler, Andreas ; Huth, Michael ; Chiang, Cheng-Tien ; Schumann, Frank O. ; Widdra, Wolf</creator><creatorcontrib>Kamrla, Robin ; Trützschler, Andreas ; Huth, Michael ; Chiang, Cheng-Tien ; Schumann, Frank O. ; Widdra, Wolf</creatorcontrib><description>The authors investigate the fluence and doping dependence of the surface photovoltage (SPV) shifts at SiO
2
/Si(001) interfaces by time-resolved photoelectron spectroscopy. Charge carriers are excited by pumping photon energies of
h
ν
p
u
m
p
=
1.2 and
2.4 eV and probed by high-order harmonics of
h
ν
p
r
o
b
e
=
22.6 eV at
0.2 and
0.7 MHz repetition rates. The authors observe SPV shifts of the nonbonding O
2
p state by
240 meV for SiO
2
/
p-Si and by
−
140 meV for SiO
2
/
n-Si upon pumping with
h
ν
p
u
m
p
=
1.2 eV, and their decay rate is estimated from time-resolved measurements. Moreover, the authors observe a striking pumping fluence dependence of SPV at these interfaces, which indicates charge carrier generation by both linear and nonlinear optical excitations.</description><identifier>ISSN: 0734-2101</identifier><identifier>EISSN: 1520-8559</identifier><identifier>DOI: 10.1116/1.5082188</identifier><identifier>CODEN: JVTAD6</identifier><language>eng</language><ispartof>Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 2019-03, Vol.37 (2)</ispartof><rights>Author(s)</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><orcidid>0000-0003-4605-3207 ; 0000-0001-5163-9590</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,776,780,790,4498,27901,27902</link.rule.ids></links><search><creatorcontrib>Kamrla, Robin</creatorcontrib><creatorcontrib>Trützschler, Andreas</creatorcontrib><creatorcontrib>Huth, Michael</creatorcontrib><creatorcontrib>Chiang, Cheng-Tien</creatorcontrib><creatorcontrib>Schumann, Frank O.</creatorcontrib><creatorcontrib>Widdra, Wolf</creatorcontrib><title>SiO 2/Si(001) studied by time-resolved valence band photoemission at MHz repetition rates: Linear and nonlinear excitation of surface photovoltage</title><title>Journal of vacuum science & technology. A, Vacuum, surfaces, and films</title><description>The authors investigate the fluence and doping dependence of the surface photovoltage (SPV) shifts at SiO
2
/Si(001) interfaces by time-resolved photoelectron spectroscopy. Charge carriers are excited by pumping photon energies of
h
ν
p
u
m
p
=
1.2 and
2.4 eV and probed by high-order harmonics of
h
ν
p
r
o
b
e
=
22.6 eV at
0.2 and
0.7 MHz repetition rates. The authors observe SPV shifts of the nonbonding O
2
p state by
240 meV for SiO
2
/
p-Si and by
−
140 meV for SiO
2
/
n-Si upon pumping with
h
ν
p
u
m
p
=
1.2 eV, and their decay rate is estimated from time-resolved measurements. Moreover, the authors observe a striking pumping fluence dependence of SPV at these interfaces, which indicates charge carrier generation by both linear and nonlinear optical excitations.</description><issn>0734-2101</issn><issn>1520-8559</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2019</creationdate><recordtype>article</recordtype><sourceid/><recordid>eNp9kM1KAzEUhYMoWKsL3yBLFaZNMpOZ1J0UtUKli-p6uPnTyHRSknSwPoZPbP_EnavLOZzzcTkIXVIyoJSWQzrgRDAqxBHqUc5IJjgfHaMeqfIiY5TQU3QW4wchhDFS9tD33M0wG87dFSH0Gse00s5oLNc4uYXJgom-6TZGB41plcESWo2X7z55s3AxOt9iSPh58oWDWZrk0tYJkEy8xVPXGgh422h92-yV-VQuwS7mLY6rYGGD3RE73yR4M-foxEITzcXh9tHrw_3LeJJNZ49P47tpFmlBUlZo0CByCZKBHpVWVYwpIngFlRFKaVZyqoHYIlfSlqqwlMu84oXUIyGYlHkf3ey58fejehncAsK67nyoaX1Ysl5q-1-Ykno7_V8h_wEd0HjM</recordid><startdate>201903</startdate><enddate>201903</enddate><creator>Kamrla, Robin</creator><creator>Trützschler, Andreas</creator><creator>Huth, Michael</creator><creator>Chiang, Cheng-Tien</creator><creator>Schumann, Frank O.</creator><creator>Widdra, Wolf</creator><scope/><orcidid>https://orcid.org/0000-0003-4605-3207</orcidid><orcidid>https://orcid.org/0000-0001-5163-9590</orcidid></search><sort><creationdate>201903</creationdate><title>SiO 2/Si(001) studied by time-resolved valence band photoemission at MHz repetition rates: Linear and nonlinear excitation of surface photovoltage</title><author>Kamrla, Robin ; Trützschler, Andreas ; Huth, Michael ; Chiang, Cheng-Tien ; Schumann, Frank O. ; Widdra, Wolf</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-s140t-4dada83bab2ad96fc722c0857a7e8ccd2651da0f43cbf6c4f15b3754bd9882bb3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2019</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Kamrla, Robin</creatorcontrib><creatorcontrib>Trützschler, Andreas</creatorcontrib><creatorcontrib>Huth, Michael</creatorcontrib><creatorcontrib>Chiang, Cheng-Tien</creatorcontrib><creatorcontrib>Schumann, Frank O.</creatorcontrib><creatorcontrib>Widdra, Wolf</creatorcontrib><jtitle>Journal of vacuum science & technology. A, Vacuum, surfaces, and films</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Kamrla, Robin</au><au>Trützschler, Andreas</au><au>Huth, Michael</au><au>Chiang, Cheng-Tien</au><au>Schumann, Frank O.</au><au>Widdra, Wolf</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>SiO 2/Si(001) studied by time-resolved valence band photoemission at MHz repetition rates: Linear and nonlinear excitation of surface photovoltage</atitle><jtitle>Journal of vacuum science & technology. A, Vacuum, surfaces, and films</jtitle><date>2019-03</date><risdate>2019</risdate><volume>37</volume><issue>2</issue><issn>0734-2101</issn><eissn>1520-8559</eissn><coden>JVTAD6</coden><abstract>The authors investigate the fluence and doping dependence of the surface photovoltage (SPV) shifts at SiO
2
/Si(001) interfaces by time-resolved photoelectron spectroscopy. Charge carriers are excited by pumping photon energies of
h
ν
p
u
m
p
=
1.2 and
2.4 eV and probed by high-order harmonics of
h
ν
p
r
o
b
e
=
22.6 eV at
0.2 and
0.7 MHz repetition rates. The authors observe SPV shifts of the nonbonding O
2
p state by
240 meV for SiO
2
/
p-Si and by
−
140 meV for SiO
2
/
n-Si upon pumping with
h
ν
p
u
m
p
=
1.2 eV, and their decay rate is estimated from time-resolved measurements. Moreover, the authors observe a striking pumping fluence dependence of SPV at these interfaces, which indicates charge carrier generation by both linear and nonlinear optical excitations.</abstract><doi>10.1116/1.5082188</doi><tpages>6</tpages><orcidid>https://orcid.org/0000-0003-4605-3207</orcidid><orcidid>https://orcid.org/0000-0001-5163-9590</orcidid></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0734-2101 |
| ispartof | Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 2019-03, Vol.37 (2) |
| issn | 0734-2101 1520-8559 |
| language | eng |
| recordid | cdi_scitation_primary_10_1116_1_5082188 |
| source | AIP Journals Complete; Alma/SFX Local Collection |
| title | SiO 2/Si(001) studied by time-resolved valence band photoemission at MHz repetition rates: Linear and nonlinear excitation of surface photovoltage |
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