Exploiting energy sequencing of low energy SIMS to determine intrinsic chemical profiles with sub-nm precision
In the past, it has been proposed that secondary ion mass spectrometry (SIMS) depth profiling of a sample using a range of beam energies could be used as a means of estimating the intrinsic sample profile by extrapolating the measured profile parameters back to zero beam energy. In this paper, the a...
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| Veröffentlicht in: | Journal of vacuum science and technology. B, Nanotechnology & microelectronics Nanotechnology & microelectronics, 2018-05, Vol.36 (3) |
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| Hauptverfasser: | , |
| Format: | Artikel |
| Sprache: | eng |
| Online-Zugang: | Volltext |
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