Selective anisotropic etching of GaN over AlGaN for very thin films

Selective etching of gallium nitride (GaN) over aluminum gallium nitride (AlxGa1-xN) with inductively coupled plasma and reactive ion etching (RIE) was examined using only chlorine and oxygen gasses. Etch selectivity was heavily influenced by the amount of oxygen present during etching and was sligh...

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Veröffentlicht in:	Journal of vacuum science & technology. A, Vacuum, surfaces, and films Vacuum, surfaces, and films, 2018-05, Vol.36 (3)
Hauptverfasser:	Wong, Joel C., Micovic, Miroslav, Brown, David F., Khalaf, Isaac, Williams, Adam, Corrion, Andrea
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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