Atomic layer deposition by reaction of molecular oxygen with tetrakisdimethylamido-metal precursors

Tetrakisdimethylamido (TDMA) based precursors are commonly used to deposit metal oxides such as TiO2, ZrO2, and HfO2 by means of chemical vapor deposition and atomic layer deposition (ALD). Both thermal and plasma enhanced ALD (PEALD) have been demonstrated with TDMA-metal precursors. While the reac...

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Veröffentlicht in:	Journal of vacuum science & technology. A, Vacuum, surfaces, and films Vacuum, surfaces, and films, 2016-01, Vol.34 (1)
Hauptverfasser:	Provine, J, Schindler, Peter, Torgersen, Jan, Kim, Hyo Jin, Karnthaler, Hans-Peter, Prinz, Fritz B.
Format:	Artikel
Sprache:	eng
Schlagworte:	CHEMICAL VAPOR DEPOSITION HAFNIUM OXIDES MATERIALS SCIENCE METALS ORGANOMETALLIC COMPOUNDS OXYGEN PLASMA PRECURSOR TITANIUM OXIDES ZIRCONIUM OXIDES
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