Challenges of contact module integration for GaN-based devices in a Si-CMOS environment

The authors report on the integration of an Au-free contact module intended for AlGaN/GaN high-electron-mobility transistors fabricated in a 200 mm Si complementary metal–oxide–semiconductor facility. Contacts are characterized via transfer line method structures, tunneling electron microscopy, and...

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Veröffentlicht in:	Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 2014-05, Vol.32 (3)
Hauptverfasser:	Johnson, Derek W., Ravikirthi, Pradhyumna, Woo Suh, Jae, Lee, Rinus T. P., Hill, Richard J. W., Hoi Wong, Man, Piner, Edwin L., Rusty Harris, Harlan
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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