Nanostructuring of GaAs with tailored topologies using colloidal lithography and dry etching

The authors report on the fabrication of GaAs nanopillars with different profiles/topologies using colloidal lithography and dry etching. GaAs nanopillars with different shapes and dimensions were successfully fabricated using inductively coupled plasma reactive ion etching. Two different etch chemi...

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Veröffentlicht in:Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 2014-03, Vol.32 (2), p.21801
Hauptverfasser: Awan, Kashif Masud, Sanatinia, Reza, Anand, Srinivasan
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Sprache:eng
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