Nanostructuring of GaAs with tailored topologies using colloidal lithography and dry etching
The authors report on the fabrication of GaAs nanopillars with different profiles/topologies using colloidal lithography and dry etching. GaAs nanopillars with different shapes and dimensions were successfully fabricated using inductively coupled plasma reactive ion etching. Two different etch chemi...
Gespeichert in:
Veröffentlicht in: | Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 2014-03, Vol.32 (2), p.21801 |
---|---|
Hauptverfasser: | , , |
Format: | Artikel |
Sprache: | eng |
Schlagworte: | |
Online-Zugang: | Volltext |
Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
Schreiben Sie den ersten Kommentar!