Improved resistive-switching characteristics observed in Pt embedded nickel-nitride films prepared by radio-frequency magnetron sputtering
In this paper, the authors report the forming-free bipolar-switching operation at low set/reset voltages (VSET/VRESET) using a Pt embedded-NiN based resistive random access memory (ReRAM) cell. Compared to conventional NiN based ReRAM cells, the variations in VSET and VRESET were reduced from 1 to 0...
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| Veröffentlicht in: | Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 2013-11, Vol.31 (6), p.60601 |
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| container_issue | 6 |
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| container_title | Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures |
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| creator | Ju Yun, Min Kim, Hee-Dong Geun Kim, Tae |
| description | In this paper, the authors report the forming-free bipolar-switching operation at low set/reset voltages (VSET/VRESET) using a Pt embedded-NiN based resistive random access memory (ReRAM) cell. Compared to conventional NiN based ReRAM cells, the variations in VSET and VRESET were reduced from 1 to 0.4 V and from 0.4 to 0.2 V, respectively, using the Pt embedded ReRAM cells. These results show that the embedded Pt particles might assist in the uniform formation of the conducting filaments in the NiN films, without an initial forming process. In addition, in the endurance and retention tests, Pt embedded ReRAM cells showed more stable repetitive dc cycling characteristics with a larger resistance ratio of approximately 1 × 101 and a longer data retention of over 105 s. |
| doi_str_mv | 10.1116/1.4824488 |
| format | Article |
| fullrecord | <record><control><sourceid>scitation_cross</sourceid><recordid>TN_cdi_scitation_primary_10_1116_1_4824488</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>scitation_primary_10_1116_1_4824488</sourcerecordid><originalsourceid>FETCH-LOGICAL-c299t-ccb309fbf411b8d5349d3d4399b5723b3c97b5364643a70d44351f27b00c1d0f3</originalsourceid><addsrcrecordid>eNqdkM1KAzEUhYMoWGoXvkG2ClOTSSYzs5TiT6GgC10P-W2jncx4k1b6Cj61M7Tg3rs5XM7HOXAQuqZkTikVd3TOq5zzqjpDE1rkJKsKUZ6jSU6FyPKSi0s0i_GDDCeqgjAyQT_Ltodubw0GG31Mfm-z-O2T3viwxnojQepkYXR0xJ2KFkbYB_yasG2VNWZ4g9efdpsFn8Abi53fthH3YHsJg6sOGKTxXebAfu1s0AfcynWwCbqAY79LY0FYX6ELJ7fRzk46Re-PD2-L52z18rRc3K8yndd1yrRWjNROOU6pqkzBeG2Y4ayuVVHmTDFdl6pgggvOZEkM56ygLi8VIZoa4tgU3RxzNXQxgnVND76VcGgoacYdG9qcdhzY2yMbtU8y-S78D9538Ac2vXHsF9lshMc</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Improved resistive-switching characteristics observed in Pt embedded nickel-nitride films prepared by radio-frequency magnetron sputtering</title><source>American Institute of Physics (AIP) Journals</source><source>Alma/SFX Local Collection</source><creator>Ju Yun, Min ; Kim, Hee-Dong ; Geun Kim, Tae</creator><creatorcontrib>Ju Yun, Min ; Kim, Hee-Dong ; Geun Kim, Tae</creatorcontrib><description>In this paper, the authors report the forming-free bipolar-switching operation at low set/reset voltages (VSET/VRESET) using a Pt embedded-NiN based resistive random access memory (ReRAM) cell. Compared to conventional NiN based ReRAM cells, the variations in VSET and VRESET were reduced from 1 to 0.4 V and from 0.4 to 0.2 V, respectively, using the Pt embedded ReRAM cells. These results show that the embedded Pt particles might assist in the uniform formation of the conducting filaments in the NiN films, without an initial forming process. In addition, in the endurance and retention tests, Pt embedded ReRAM cells showed more stable repetitive dc cycling characteristics with a larger resistance ratio of approximately 1 × 101 and a longer data retention of over 105 s.</description><identifier>ISSN: 2166-2746</identifier><identifier>EISSN: 1520-8567</identifier><identifier>EISSN: 2166-2754</identifier><identifier>DOI: 10.1116/1.4824488</identifier><identifier>CODEN: JVTBD9</identifier><language>eng</language><ispartof>Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 2013-11, Vol.31 (6), p.60601</ispartof><rights>American Vacuum Society</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c299t-ccb309fbf411b8d5349d3d4399b5723b3c97b5364643a70d44351f27b00c1d0f3</citedby><cites>FETCH-LOGICAL-c299t-ccb309fbf411b8d5349d3d4399b5723b3c97b5364643a70d44351f27b00c1d0f3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,776,780,790,4497,27903,27904</link.rule.ids></links><search><creatorcontrib>Ju Yun, Min</creatorcontrib><creatorcontrib>Kim, Hee-Dong</creatorcontrib><creatorcontrib>Geun Kim, Tae</creatorcontrib><title>Improved resistive-switching characteristics observed in Pt embedded nickel-nitride films prepared by radio-frequency magnetron sputtering</title><title>Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures</title><description>In this paper, the authors report the forming-free bipolar-switching operation at low set/reset voltages (VSET/VRESET) using a Pt embedded-NiN based resistive random access memory (ReRAM) cell. Compared to conventional NiN based ReRAM cells, the variations in VSET and VRESET were reduced from 1 to 0.4 V and from 0.4 to 0.2 V, respectively, using the Pt embedded ReRAM cells. These results show that the embedded Pt particles might assist in the uniform formation of the conducting filaments in the NiN films, without an initial forming process. In addition, in the endurance and retention tests, Pt embedded ReRAM cells showed more stable repetitive dc cycling characteristics with a larger resistance ratio of approximately 1 × 101 and a longer data retention of over 105 s.</description><issn>2166-2746</issn><issn>1520-8567</issn><issn>2166-2754</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2013</creationdate><recordtype>article</recordtype><recordid>eNqdkM1KAzEUhYMoWGoXvkG2ClOTSSYzs5TiT6GgC10P-W2jncx4k1b6Cj61M7Tg3rs5XM7HOXAQuqZkTikVd3TOq5zzqjpDE1rkJKsKUZ6jSU6FyPKSi0s0i_GDDCeqgjAyQT_Ltodubw0GG31Mfm-z-O2T3viwxnojQepkYXR0xJ2KFkbYB_yasG2VNWZ4g9efdpsFn8Abi53fthH3YHsJg6sOGKTxXebAfu1s0AfcynWwCbqAY79LY0FYX6ELJ7fRzk46Re-PD2-L52z18rRc3K8yndd1yrRWjNROOU6pqkzBeG2Y4ayuVVHmTDFdl6pgggvOZEkM56ygLi8VIZoa4tgU3RxzNXQxgnVND76VcGgoacYdG9qcdhzY2yMbtU8y-S78D9538Ac2vXHsF9lshMc</recordid><startdate>201311</startdate><enddate>201311</enddate><creator>Ju Yun, Min</creator><creator>Kim, Hee-Dong</creator><creator>Geun Kim, Tae</creator><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>201311</creationdate><title>Improved resistive-switching characteristics observed in Pt embedded nickel-nitride films prepared by radio-frequency magnetron sputtering</title><author>Ju Yun, Min ; Kim, Hee-Dong ; Geun Kim, Tae</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c299t-ccb309fbf411b8d5349d3d4399b5723b3c97b5364643a70d44351f27b00c1d0f3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2013</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Ju Yun, Min</creatorcontrib><creatorcontrib>Kim, Hee-Dong</creatorcontrib><creatorcontrib>Geun Kim, Tae</creatorcontrib><collection>CrossRef</collection><jtitle>Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Ju Yun, Min</au><au>Kim, Hee-Dong</au><au>Geun Kim, Tae</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Improved resistive-switching characteristics observed in Pt embedded nickel-nitride films prepared by radio-frequency magnetron sputtering</atitle><jtitle>Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures</jtitle><date>2013-11</date><risdate>2013</risdate><volume>31</volume><issue>6</issue><spage>60601</spage><pages>60601-</pages><issn>2166-2746</issn><eissn>1520-8567</eissn><eissn>2166-2754</eissn><coden>JVTBD9</coden><abstract>In this paper, the authors report the forming-free bipolar-switching operation at low set/reset voltages (VSET/VRESET) using a Pt embedded-NiN based resistive random access memory (ReRAM) cell. Compared to conventional NiN based ReRAM cells, the variations in VSET and VRESET were reduced from 1 to 0.4 V and from 0.4 to 0.2 V, respectively, using the Pt embedded ReRAM cells. These results show that the embedded Pt particles might assist in the uniform formation of the conducting filaments in the NiN films, without an initial forming process. In addition, in the endurance and retention tests, Pt embedded ReRAM cells showed more stable repetitive dc cycling characteristics with a larger resistance ratio of approximately 1 × 101 and a longer data retention of over 105 s.</abstract><doi>10.1116/1.4824488</doi><tpages>4</tpages></addata></record> |
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| source | American Institute of Physics (AIP) Journals; Alma/SFX Local Collection |
| title | Improved resistive-switching characteristics observed in Pt embedded nickel-nitride films prepared by radio-frequency magnetron sputtering |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-22T18%3A18%3A18IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-scitation_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Improved%20resistive-switching%20characteristics%20observed%20in%20Pt%20embedded%20nickel-nitride%20films%20prepared%20by%20radio-frequency%20magnetron%20sputtering&rft.jtitle=Journal%20of%20Vacuum%20Science%20&%20Technology%20B:%20Microelectronics%20and%20Nanometer%20Structures&rft.au=Ju%20Yun,%20Min&rft.date=2013-11&rft.volume=31&rft.issue=6&rft.spage=60601&rft.pages=60601-&rft.issn=2166-2746&rft.eissn=1520-8567&rft.coden=JVTBD9&rft_id=info:doi/10.1116/1.4824488&rft_dat=%3Cscitation_cross%3Escitation_primary_10_1116_1_4824488%3C/scitation_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |