Development of AlGaN-based graded-index-separate-confinement-heterostructure deep UV emitters by molecular beam epitaxy

The authors report on the growth, structure, and emission properties of AlGaN double heterostructures having a graded-index-separate-confinement-heterostructure design. These devices were grown on the Si-face of 6H-SiC substrates by plasma-assisted molecular-beam epitaxy. The active region of the de...

Ausführliche Beschreibung

Bibliographische Detailangaben

Veröffentlicht in:	Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 2013-05, Vol.31 (3)
Hauptverfasser:	Sun, Haiding, Woodward, Jeff, Yin, Jian, Moldawer, Adam, Pecora, Emanuele F., Nikiforov, Alexey Yu, Dal Negro, Luca, Paiella, Roberto, Ludwig, Karl, Smith, David J., Moustakas, Theodore D.
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!