Plasma-enhanced atomic layer deposition and etching of high-k gadolinium oxide

Atomic layer deposition (ALD) of high-quality gadolinium oxide thin films is achieved using Gd(iPrCp)3 and O2 plasma. Gd2O3 growth is observed from 150 to 350 °C, though the optical properties of the film improve at higher temperature. True layer-by-layer ALD growth of Gd2O3 occurred in a relatively...

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