Density multiplication of nanostructures fabricated by ultralow voltage electron beam lithography using PMMA as positive- and negative-tone resist
The authors report a density multiplication process for nanoscale patterns composed of dots and lines using electron beam lithography with low voltage 1 keV exposures and cold development. The density doubling is achieved in a single exposure-development step using polymethylmethacrylate (PMMA) as t...
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Veröffentlicht in: | Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena Microelectronics and nanometer structures processing, measurement and phenomena, 2011-11, Vol.29 (6), p.06F312-06F312-8 |
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container_title | Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena |
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creator | Adeyenuwo, Adegboyega P. Stepanova, Maria Dew, Steven K. |
description | The authors report a density multiplication process for nanoscale patterns composed of dots and lines using electron beam lithography with low voltage 1 keV exposures and cold development. The density doubling is achieved in a single exposure-development step using polymethylmethacrylate (PMMA) as the resist. PMMA exhibits a dual positive- and negative-tone behavior depending on the electron dose employed in this density multiplication process. Fabricated nanostructures are characterized via scanning electron microscopy and subsequent feature size measurements. After density doubling, the minimum dot diameter of an initially 80 nm pitch array of single pixel dots was measured as approximately 27 nm, and the minimum width in an initially 100 nm pitch array of lines was approximately 21 nm. Methodologies for controlling the dimensions of fabricated structures are discussed. Modeling of the electron beam exposure has been carried out using an original electron beam lithography simulator in order to understand the nominal yields of scission in PMMA required in order to achieve the density multiplication, and the results are discussed. |
doi_str_mv | 10.1116/1.3657512 |
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fullrecord | <record><control><sourceid>scitation_cross</sourceid><recordid>TN_cdi_scitation_primary_10_1116_1_3657512</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>scitation_primary_10_1116_1_3657512</sourcerecordid><originalsourceid>FETCH-LOGICAL-c420t-fcad3e7ead3d6c4e9ec8eae9a80967cadc0e28f6e77041668e8cf9c851786fd93</originalsourceid><addsrcrecordid>eNp9kMtKAzEUhoMoWKsL3yBbhanJTCfJbIRSr9CiC10PaeZkGplOhiSt9DV8YtMLKEjdJDmc7_wnfAhdUjKglLIbOshYznOaHqEezVOSiJzx4_gmnCaUpNkpOvP-gxDC8izroa87aL0Ja7xYNsF0jVEyGNtiq3ErW-uDW6qwdOCxljO36UKFZ2scaScb-4lXtgmyBgwNqODi5AzkAjcmzG3tZDePqDdtjV-n0xGWHnc2rjMrSLBsK9xCLbdVsC3guMb4cI5OtGw8XOzvPnp_uH8bPyWTl8fn8WiSqGFKQqKVrDLgEM-KqSEUoARIKKQgBeOxqQikQjPgnAwpYwKE0oUSOeWC6arI-uhql6uc9d6BLjtnFtKtS0rKjcySlnuZkb3dsV6ZsDV0GN4bLX8bjQHXhwJW1v0Ml12l_4P_fu0bSKCeFw</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Density multiplication of nanostructures fabricated by ultralow voltage electron beam lithography using PMMA as positive- and negative-tone resist</title><source>AIP Journals Complete</source><source>Alma/SFX Local Collection</source><creator>Adeyenuwo, Adegboyega P. ; Stepanova, Maria ; Dew, Steven K.</creator><creatorcontrib>Adeyenuwo, Adegboyega P. ; Stepanova, Maria ; Dew, Steven K.</creatorcontrib><description>The authors report a density multiplication process for nanoscale patterns composed of dots and lines using electron beam lithography with low voltage 1 keV exposures and cold development. The density doubling is achieved in a single exposure-development step using polymethylmethacrylate (PMMA) as the resist. PMMA exhibits a dual positive- and negative-tone behavior depending on the electron dose employed in this density multiplication process. Fabricated nanostructures are characterized via scanning electron microscopy and subsequent feature size measurements. After density doubling, the minimum dot diameter of an initially 80 nm pitch array of single pixel dots was measured as approximately 27 nm, and the minimum width in an initially 100 nm pitch array of lines was approximately 21 nm. Methodologies for controlling the dimensions of fabricated structures are discussed. Modeling of the electron beam exposure has been carried out using an original electron beam lithography simulator in order to understand the nominal yields of scission in PMMA required in order to achieve the density multiplication, and the results are discussed.</description><identifier>ISSN: 1071-1023</identifier><identifier>ISSN: 2166-2746</identifier><identifier>EISSN: 1520-8567</identifier><identifier>EISSN: 2166-2754</identifier><identifier>DOI: 10.1116/1.3657512</identifier><identifier>CODEN: JVTBD9</identifier><language>eng</language><publisher>American Vacuum Society</publisher><ispartof>Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 2011-11, Vol.29 (6), p.06F312-06F312-8</ispartof><rights>American Vacuum Society</rights><rights>2011 American Vacuum Society</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c420t-fcad3e7ead3d6c4e9ec8eae9a80967cadc0e28f6e77041668e8cf9c851786fd93</citedby><cites>FETCH-LOGICAL-c420t-fcad3e7ead3d6c4e9ec8eae9a80967cadc0e28f6e77041668e8cf9c851786fd93</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,794,4512,27924,27925</link.rule.ids></links><search><creatorcontrib>Adeyenuwo, Adegboyega P.</creatorcontrib><creatorcontrib>Stepanova, Maria</creatorcontrib><creatorcontrib>Dew, Steven K.</creatorcontrib><title>Density multiplication of nanostructures fabricated by ultralow voltage electron beam lithography using PMMA as positive- and negative-tone resist</title><title>Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena</title><description>The authors report a density multiplication process for nanoscale patterns composed of dots and lines using electron beam lithography with low voltage 1 keV exposures and cold development. The density doubling is achieved in a single exposure-development step using polymethylmethacrylate (PMMA) as the resist. PMMA exhibits a dual positive- and negative-tone behavior depending on the electron dose employed in this density multiplication process. Fabricated nanostructures are characterized via scanning electron microscopy and subsequent feature size measurements. After density doubling, the minimum dot diameter of an initially 80 nm pitch array of single pixel dots was measured as approximately 27 nm, and the minimum width in an initially 100 nm pitch array of lines was approximately 21 nm. Methodologies for controlling the dimensions of fabricated structures are discussed. Modeling of the electron beam exposure has been carried out using an original electron beam lithography simulator in order to understand the nominal yields of scission in PMMA required in order to achieve the density multiplication, and the results are discussed.</description><issn>1071-1023</issn><issn>2166-2746</issn><issn>1520-8567</issn><issn>2166-2754</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2011</creationdate><recordtype>article</recordtype><recordid>eNp9kMtKAzEUhoMoWKsL3yBbhanJTCfJbIRSr9CiC10PaeZkGplOhiSt9DV8YtMLKEjdJDmc7_wnfAhdUjKglLIbOshYznOaHqEezVOSiJzx4_gmnCaUpNkpOvP-gxDC8izroa87aL0Ja7xYNsF0jVEyGNtiq3ErW-uDW6qwdOCxljO36UKFZ2scaScb-4lXtgmyBgwNqODi5AzkAjcmzG3tZDePqDdtjV-n0xGWHnc2rjMrSLBsK9xCLbdVsC3guMb4cI5OtGw8XOzvPnp_uH8bPyWTl8fn8WiSqGFKQqKVrDLgEM-KqSEUoARIKKQgBeOxqQikQjPgnAwpYwKE0oUSOeWC6arI-uhql6uc9d6BLjtnFtKtS0rKjcySlnuZkb3dsV6ZsDV0GN4bLX8bjQHXhwJW1v0Ml12l_4P_fu0bSKCeFw</recordid><startdate>20111101</startdate><enddate>20111101</enddate><creator>Adeyenuwo, Adegboyega P.</creator><creator>Stepanova, Maria</creator><creator>Dew, Steven K.</creator><general>American Vacuum Society</general><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>20111101</creationdate><title>Density multiplication of nanostructures fabricated by ultralow voltage electron beam lithography using PMMA as positive- and negative-tone resist</title><author>Adeyenuwo, Adegboyega P. ; Stepanova, Maria ; Dew, Steven K.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c420t-fcad3e7ead3d6c4e9ec8eae9a80967cadc0e28f6e77041668e8cf9c851786fd93</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2011</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Adeyenuwo, Adegboyega P.</creatorcontrib><creatorcontrib>Stepanova, Maria</creatorcontrib><creatorcontrib>Dew, Steven K.</creatorcontrib><collection>CrossRef</collection><jtitle>Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Adeyenuwo, Adegboyega P.</au><au>Stepanova, Maria</au><au>Dew, Steven K.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Density multiplication of nanostructures fabricated by ultralow voltage electron beam lithography using PMMA as positive- and negative-tone resist</atitle><jtitle>Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena</jtitle><date>2011-11-01</date><risdate>2011</risdate><volume>29</volume><issue>6</issue><spage>06F312</spage><epage>06F312-8</epage><pages>06F312-06F312-8</pages><issn>1071-1023</issn><issn>2166-2746</issn><eissn>1520-8567</eissn><eissn>2166-2754</eissn><coden>JVTBD9</coden><abstract>The authors report a density multiplication process for nanoscale patterns composed of dots and lines using electron beam lithography with low voltage 1 keV exposures and cold development. The density doubling is achieved in a single exposure-development step using polymethylmethacrylate (PMMA) as the resist. PMMA exhibits a dual positive- and negative-tone behavior depending on the electron dose employed in this density multiplication process. Fabricated nanostructures are characterized via scanning electron microscopy and subsequent feature size measurements. After density doubling, the minimum dot diameter of an initially 80 nm pitch array of single pixel dots was measured as approximately 27 nm, and the minimum width in an initially 100 nm pitch array of lines was approximately 21 nm. Methodologies for controlling the dimensions of fabricated structures are discussed. Modeling of the electron beam exposure has been carried out using an original electron beam lithography simulator in order to understand the nominal yields of scission in PMMA required in order to achieve the density multiplication, and the results are discussed.</abstract><pub>American Vacuum Society</pub><doi>10.1116/1.3657512</doi><tpages>8</tpages></addata></record> |
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title | Density multiplication of nanostructures fabricated by ultralow voltage electron beam lithography using PMMA as positive- and negative-tone resist |
url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-28T05%3A26%3A36IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-scitation_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Density%20multiplication%20of%20nanostructures%20fabricated%20by%20ultralow%20voltage%20electron%20beam%20lithography%20using%20PMMA%20as%20positive-%20and%20negative-tone%20resist&rft.jtitle=Journal%20of%20vacuum%20science%20&%20technology.%20B,%20Microelectronics%20and%20nanometer%20structures%20processing,%20measurement%20and%20phenomena&rft.au=Adeyenuwo,%20Adegboyega%20P.&rft.date=2011-11-01&rft.volume=29&rft.issue=6&rft.spage=06F312&rft.epage=06F312-8&rft.pages=06F312-06F312-8&rft.issn=1071-1023&rft.eissn=1520-8567&rft.coden=JVTBD9&rft_id=info:doi/10.1116/1.3657512&rft_dat=%3Cscitation_cross%3Escitation_primary_10_1116_1_3657512%3C/scitation_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |