Study of the physical and electrical degradation of thin oxide films by atomic force microscope

The hillocks created by the application of ramped voltage stress on thin oxide films have been imaged using different modes of the atomic force microscope (AFM) and using conductive or insulating tips, leading to the conclusion that these anomalous hillocks correspond to real (physical) modification...

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Veröffentlicht in:	Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena Microelectronics and nanometer structures processing, measurement and phenomena, 2011-01, Vol.29 (1), p.1
Hauptverfasser:	Hourani, Wael, Gautier, Brice, Militaru, Liviu, Albertini, David, Descamps-Mandine, Armel
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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