GaN epitaxial films grown by hydride vapor phase epitaxy on polycrystalline chemical vapor deposition diamond substrates using surface nanostructuring with TiN or anodic Al oxide

Growth of GaN on polycrystalline chemical vapor deposition (CVD) diamond prepared on Si was achieved by hydride vapor phase epitaxy (HVPE). If the polycrystalline CVD diamond is separated from the Si substrate and the side turned to Si is covered by either TiN or anodic Al oxide, this is found to fa...

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Veröffentlicht in:	Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena Microelectronics and nanometer structures processing, measurement and phenomena, 2010-09, Vol.28 (5), p.1011-1015
Hauptverfasser:	Polyakov, A. Y., Markov, A. V., Duhnovsky, M. P., Mezhennyi, M. V., Donskov, A. A., Malakhov, S. S., Govorkov, A. V., Kozlova, Yu. P., Pavlov, V. F., Smirnov, N. B., Yugova, T. G., Belogorokhov, A. I., Belogorokhov, I. A., Ratnikova, A. K., Fyodorov, Yu. Yu, Kudryashov, O. Yu, Leontyev, I. A., Ratushnyi, V. I., Pearton, S. J.
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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