Cryogenic inductively coupled plasma etching for fabrication of tapered through-silicon vias

Vertical interconnects pose an interesting method for heterogeneous integration of electronic technologies allowing three-dimensional (3D) stacking of microelectromechanical systems devices and integrated circuit components. The vertical interconnects, referred to as through-silicon vias, begin with...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Journal of vacuum science & technology. A, Vacuum, surfaces, and films Vacuum, surfaces, and films, 2010-07, Vol.28 (4), p.719-725
Hauptverfasser: Kamto, A., Divan, R., Sumant, A. V., Burkett, S. L.
Format: Artikel
Sprache:eng
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!