Electrical characterization of InGaAs ultra-shallow junctions

In this study, we investigate the limitations to sheet resistance and Hall effect characterization of ultra-shallow junctions (USJs) in In 0.53 Ga 0.47 As . We compare conventional van der Pauw and Hall effect measurements with micro four-point probe (M4PP) and micro Hall effect methods. Due to the...

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Veröffentlicht in:	Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena Microelectronics and nanometer structures processing, measurement and phenomena, 2010-01, Vol.28 (1), p.C1C41-C1C47
Hauptverfasser:	Petersen, Dirch H., Hansen, Ole, Bøggild, Peter, Lin, Rong, Nielsen, Peter F., Lin, Dennis, Adelmann, Christoph, Alian, Alireza, Merckling, Clement, Penaud, Julien, Brammertz, Guy, Goossens, Jozefien, Vandervorst, Wilfried, Clarysse, Trudo
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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