Auger electron spectroscopy study of reactor walls in transition from an O 2 to a Cl 2 plasma

In plasma etching processes, the reactor wall conditions can change over time due to a number of intentional and unintentional reasons, leading to a variability in the radical number densities in the plasma, caused by changes in the probabilities for reactions such as recombination at the walls. Thi...

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Veröffentlicht in:	Journal of vacuum science & technology. A, Vacuum, surfaces, and films Vacuum, surfaces, and films, 2009-05, Vol.27 (3), p.515-520
Hauptverfasser:	Guha, Joydeep, Donnelly, Vincent M.
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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