REBL: A novel approach to high speed maskless electron beam direct write lithography

The system concepts used in a novel approach for a high throughput maskless lithography system called reflective electron beam lithography (REBL) are described. The system is specifically targeting five to seven wafer levels per hour throughput on average at the 45 nm node, with extendibility to the...

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Veröffentlicht in:	Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena Microelectronics and nanometer structures processing, measurement and phenomena, 2009-01, Vol.27 (1), p.161-166
Hauptverfasser:	Petric, Paul, Bevis, Chris, Carroll, Allen, Percy, Henry, Zywno, Marek, Standiford, Keith, Brodie, Alan, Bareket, Noah, Grella, Luca
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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