High rate deposition of photocatalytic Ti O 2 films with high activity by hollow cathode gas-flow sputtering method
Photocatalytic Ti O 2 films were deposited by a hollow cathode gas-flow sputtering method using two Ti metal targets mounted parallel to each other. The Ar and O 2 flow rates were 3000 and 0 – 50 SCCM (SCCM denotes cubic centimeter per minute at STP), respectively, and total gas pressure during the...
Gespeichert in:
| Veröffentlicht in: | Journal of vacuum science & technology. A, Vacuum, surfaces, and films Vacuum, surfaces, and films, 2008-07, Vol.26 (4), p.893-897 |
|---|---|
| Hauptverfasser: | , , , , |
| Format: | Artikel |
| Sprache: | eng |
| Online-Zugang: | Volltext |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | 897 |
|---|---|
| container_issue | 4 |
| container_start_page | 893 |
| container_title | Journal of vacuum science & technology. A, Vacuum, surfaces, and films |
| container_volume | 26 |
| creator | Kubo, Yoshiyuki Iwabuchi, Yoshinori Yoshikawa, Masato Sato, Yasushi Shigesato, Yuzo |
| description | Photocatalytic
Ti
O
2
films were deposited by a hollow cathode gas-flow sputtering method using two Ti metal targets mounted parallel to each other. The Ar and
O
2
flow rates were 3000 and
0
–
50
SCCM
(SCCM denotes cubic centimeter per minute at STP), respectively, and total gas pressure during the deposition was maintained at
45
Pa
. The highest deposition rate for the photocatalytic
Ti
O
2
films was
162
nm
∕
min
at
30
SCCM
of
O
2
flow. The as-deposited films and postannealed films, annealed in air at
300
°
C
for
1
h
, were used to carry out photocatalytic decomposition of acetaldehyde
(
C
H
3
C
H
O
)
. In particular, the postannealed films showed extremely high photocatalytic activity compared to the photocatalytic activity of films deposited by conventional reactive sputtering. |
| doi_str_mv | 10.1116/1.2836425 |
| format | Article |
| fullrecord | <record><control><sourceid>scitation</sourceid><recordid>TN_cdi_scitation_primary_10_1116_1_2836425</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>scitation_primary_10_1116_1_2836425</sourcerecordid><originalsourceid>FETCH-scitation_primary_10_1116_1_28364253</originalsourceid><addsrcrecordid>eNqVT8tKxDAUDaJgfSz8g7sWOpObTuu4FmV2bmYfYps0V9pJSK4z9O81MOBOcHXgvDhHiAeUK0Ts1rhS26bbqPZCVNgqWW_b9vlSVPKp2dQKJV6Lm5w_pZRKya4SeUejh2TYwmBjyMQUDhAcRB849IbNtDD1sCd4BwWOpjnDidiDL0HTMx2JF_hYwIdpCif4yfgwWBhNrl0hcvxitokOI8y2aHfiypkp2_sz3orHt9f9y67OPbEpA3RMNJu0aJS63NKoz7eaP8zHkH6NOg6u-VfzNwcIYus</addsrcrecordid><sourcetype>Enrichment Source</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>High rate deposition of photocatalytic Ti O 2 films with high activity by hollow cathode gas-flow sputtering method</title><source>AIP Journals Complete</source><creator>Kubo, Yoshiyuki ; Iwabuchi, Yoshinori ; Yoshikawa, Masato ; Sato, Yasushi ; Shigesato, Yuzo</creator><creatorcontrib>Kubo, Yoshiyuki ; Iwabuchi, Yoshinori ; Yoshikawa, Masato ; Sato, Yasushi ; Shigesato, Yuzo</creatorcontrib><description>Photocatalytic
Ti
O
2
films were deposited by a hollow cathode gas-flow sputtering method using two Ti metal targets mounted parallel to each other. The Ar and
O
2
flow rates were 3000 and
0
–
50
SCCM
(SCCM denotes cubic centimeter per minute at STP), respectively, and total gas pressure during the deposition was maintained at
45
Pa
. The highest deposition rate for the photocatalytic
Ti
O
2
films was
162
nm
∕
min
at
30
SCCM
of
O
2
flow. The as-deposited films and postannealed films, annealed in air at
300
°
C
for
1
h
, were used to carry out photocatalytic decomposition of acetaldehyde
(
C
H
3
C
H
O
)
. In particular, the postannealed films showed extremely high photocatalytic activity compared to the photocatalytic activity of films deposited by conventional reactive sputtering.</description><identifier>ISSN: 0734-2101</identifier><identifier>EISSN: 1520-8559</identifier><identifier>DOI: 10.1116/1.2836425</identifier><identifier>CODEN: JVTAD6</identifier><language>eng</language><ispartof>Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 2008-07, Vol.26 (4), p.893-897</ispartof><rights>American Vacuum Society</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,794,4511,27923,27924</link.rule.ids></links><search><creatorcontrib>Kubo, Yoshiyuki</creatorcontrib><creatorcontrib>Iwabuchi, Yoshinori</creatorcontrib><creatorcontrib>Yoshikawa, Masato</creatorcontrib><creatorcontrib>Sato, Yasushi</creatorcontrib><creatorcontrib>Shigesato, Yuzo</creatorcontrib><title>High rate deposition of photocatalytic Ti O 2 films with high activity by hollow cathode gas-flow sputtering method</title><title>Journal of vacuum science & technology. A, Vacuum, surfaces, and films</title><description>Photocatalytic
Ti
O
2
films were deposited by a hollow cathode gas-flow sputtering method using two Ti metal targets mounted parallel to each other. The Ar and
O
2
flow rates were 3000 and
0
–
50
SCCM
(SCCM denotes cubic centimeter per minute at STP), respectively, and total gas pressure during the deposition was maintained at
45
Pa
. The highest deposition rate for the photocatalytic
Ti
O
2
films was
162
nm
∕
min
at
30
SCCM
of
O
2
flow. The as-deposited films and postannealed films, annealed in air at
300
°
C
for
1
h
, were used to carry out photocatalytic decomposition of acetaldehyde
(
C
H
3
C
H
O
)
. In particular, the postannealed films showed extremely high photocatalytic activity compared to the photocatalytic activity of films deposited by conventional reactive sputtering.</description><issn>0734-2101</issn><issn>1520-8559</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2008</creationdate><recordtype>article</recordtype><sourceid/><recordid>eNqVT8tKxDAUDaJgfSz8g7sWOpObTuu4FmV2bmYfYps0V9pJSK4z9O81MOBOcHXgvDhHiAeUK0Ts1rhS26bbqPZCVNgqWW_b9vlSVPKp2dQKJV6Lm5w_pZRKya4SeUejh2TYwmBjyMQUDhAcRB849IbNtDD1sCd4BwWOpjnDidiDL0HTMx2JF_hYwIdpCif4yfgwWBhNrl0hcvxitokOI8y2aHfiypkp2_sz3orHt9f9y67OPbEpA3RMNJu0aJS63NKoz7eaP8zHkH6NOg6u-VfzNwcIYus</recordid><startdate>200807</startdate><enddate>200807</enddate><creator>Kubo, Yoshiyuki</creator><creator>Iwabuchi, Yoshinori</creator><creator>Yoshikawa, Masato</creator><creator>Sato, Yasushi</creator><creator>Shigesato, Yuzo</creator><scope/></search><sort><creationdate>200807</creationdate><title>High rate deposition of photocatalytic Ti O 2 films with high activity by hollow cathode gas-flow sputtering method</title><author>Kubo, Yoshiyuki ; Iwabuchi, Yoshinori ; Yoshikawa, Masato ; Sato, Yasushi ; Shigesato, Yuzo</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-scitation_primary_10_1116_1_28364253</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2008</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Kubo, Yoshiyuki</creatorcontrib><creatorcontrib>Iwabuchi, Yoshinori</creatorcontrib><creatorcontrib>Yoshikawa, Masato</creatorcontrib><creatorcontrib>Sato, Yasushi</creatorcontrib><creatorcontrib>Shigesato, Yuzo</creatorcontrib><jtitle>Journal of vacuum science & technology. A, Vacuum, surfaces, and films</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Kubo, Yoshiyuki</au><au>Iwabuchi, Yoshinori</au><au>Yoshikawa, Masato</au><au>Sato, Yasushi</au><au>Shigesato, Yuzo</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>High rate deposition of photocatalytic Ti O 2 films with high activity by hollow cathode gas-flow sputtering method</atitle><jtitle>Journal of vacuum science & technology. A, Vacuum, surfaces, and films</jtitle><date>2008-07</date><risdate>2008</risdate><volume>26</volume><issue>4</issue><spage>893</spage><epage>897</epage><pages>893-897</pages><issn>0734-2101</issn><eissn>1520-8559</eissn><coden>JVTAD6</coden><abstract>Photocatalytic
Ti
O
2
films were deposited by a hollow cathode gas-flow sputtering method using two Ti metal targets mounted parallel to each other. The Ar and
O
2
flow rates were 3000 and
0
–
50
SCCM
(SCCM denotes cubic centimeter per minute at STP), respectively, and total gas pressure during the deposition was maintained at
45
Pa
. The highest deposition rate for the photocatalytic
Ti
O
2
films was
162
nm
∕
min
at
30
SCCM
of
O
2
flow. The as-deposited films and postannealed films, annealed in air at
300
°
C
for
1
h
, were used to carry out photocatalytic decomposition of acetaldehyde
(
C
H
3
C
H
O
)
. In particular, the postannealed films showed extremely high photocatalytic activity compared to the photocatalytic activity of films deposited by conventional reactive sputtering.</abstract><doi>10.1116/1.2836425</doi><tpages>5</tpages></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0734-2101 |
| ispartof | Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 2008-07, Vol.26 (4), p.893-897 |
| issn | 0734-2101 1520-8559 |
| language | eng |
| recordid | cdi_scitation_primary_10_1116_1_2836425 |
| source | AIP Journals Complete |
| title | High rate deposition of photocatalytic Ti O 2 films with high activity by hollow cathode gas-flow sputtering method |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-08T12%3A13%3A22IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-scitation&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=High%20rate%20deposition%20of%20photocatalytic%20Ti%20O%202%20films%20with%20high%20activity%20by%20hollow%20cathode%20gas-flow%20sputtering%20method&rft.jtitle=Journal%20of%20vacuum%20science%20&%20technology.%20A,%20Vacuum,%20surfaces,%20and%20films&rft.au=Kubo,%20Yoshiyuki&rft.date=2008-07&rft.volume=26&rft.issue=4&rft.spage=893&rft.epage=897&rft.pages=893-897&rft.issn=0734-2101&rft.eissn=1520-8559&rft.coden=JVTAD6&rft_id=info:doi/10.1116/1.2836425&rft_dat=%3Cscitation%3Escitation_primary_10_1116_1_2836425%3C/scitation%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |