Growth and characterization of GaAsSb metamorphic samples on an InP substrate
Buffer layers of Ga As 1 − x Sb x were grown on an InP substrate starting at x = 0.49 (lattice matched to InP) and increasing x in steps of 0.03–1.0 (GaSb), followed by a 0.5 μ m thick GaSb metamorphic layer. A 10 nm thick InAs quantum well was grown on top and capped with a 100 nm GaSb. All layers...
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| Veröffentlicht in: | Journal of Vacuum Science and Technology. A, International Journal Devoted to Vacuum, Surfaces, and Films International Journal Devoted to Vacuum, Surfaces, and Films, 2006-05, Vol.24 (3), p.587-590 |
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| container_title | Journal of Vacuum Science and Technology. A, International Journal Devoted to Vacuum, Surfaces, and Films |
| container_volume | 24 |
| creator | Mohammedy, F. M. Hulko, O. Robinson, B. J. Thompson, D. A. Deen, M. J. Simmons, J. G. |
| description | Buffer layers of
Ga
As
1
−
x
Sb
x
were grown on an InP substrate starting at
x
=
0.49
(lattice matched to InP) and increasing
x
in steps of 0.03–1.0 (GaSb), followed by a
0.5
μ
m
thick GaSb metamorphic layer. A
10
nm
thick InAs quantum well was grown on top and capped with a
100
nm
GaSb. All layers were grown using gas source molecular beam epitaxy by reducing the As flux in small steps while keeping the Sb flux fixed. The substrate temperature during growth was
∼
490
°
C
. High-Resolution x-ray diffraction analysis showed that the metamorphic layer was almost fully relaxed. Cross-sectional transmission electron microscopy images show that a postgrowth anneal at
600
°
C
for
30
s
successfully reduces the number of dislocations threading through the metamorphic layer. Hence the top layer can be used satisfactorily as a pseudosubstrate for subsequent layer growths assuming a GaSb lattice constant. |
| doi_str_mv | 10.1116/1.2194024 |
| format | Article |
| fullrecord | <record><control><sourceid>scitation_cross</sourceid><recordid>TN_cdi_scitation_primary_10_1116_1_2194024</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>scitation_primary_10_1116_1_2194024</sourcerecordid><originalsourceid>FETCH-LOGICAL-c327t-c3e48e249d6e84b41a61c86a0e9d436d422112481b932e2b2de5c96273440ec43</originalsourceid><addsrcrecordid>eNqd0E9Lw0AQBfBFFKzVg99gwZNC6s5k8-9Yiq2FioJ6XjabCYk02bC7KvrpTW3Bu5eZy48H7zF2CWIGAOktzBAKKVAesQkkKKI8SYpjNhFZLCMEAafszPs3IQSiSCfsYeXsZ2i47ituGu20CeTabx1a23Nb85We--eSdxR0Z93QtIZ73Q1b8nwEuufr_on799IHpwOds5Nabz1dHP6UvS7vXhb30eZxtV7MN5GJMQvjJZkTyqJKKZelBJ2CyVMtqKhknFYSEQBlDmURI2GJFSWmSHHsIAUZGU_Z1T7X-tAqb9pApjG278kEhSLLMsizUV3vlXHWe0e1GlzbafelQKjdWgrUYa3R3uztLuy3_f_wh3V_UA1VHf8AsMx2zA</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Growth and characterization of GaAsSb metamorphic samples on an InP substrate</title><source>AIP Journals Complete</source><creator>Mohammedy, F. M. ; Hulko, O. ; Robinson, B. J. ; Thompson, D. A. ; Deen, M. J. ; Simmons, J. G.</creator><creatorcontrib>Mohammedy, F. M. ; Hulko, O. ; Robinson, B. J. ; Thompson, D. A. ; Deen, M. J. ; Simmons, J. G.</creatorcontrib><description>Buffer layers of
Ga
As
1
−
x
Sb
x
were grown on an InP substrate starting at
x
=
0.49
(lattice matched to InP) and increasing
x
in steps of 0.03–1.0 (GaSb), followed by a
0.5
μ
m
thick GaSb metamorphic layer. A
10
nm
thick InAs quantum well was grown on top and capped with a
100
nm
GaSb. All layers were grown using gas source molecular beam epitaxy by reducing the As flux in small steps while keeping the Sb flux fixed. The substrate temperature during growth was
∼
490
°
C
. High-Resolution x-ray diffraction analysis showed that the metamorphic layer was almost fully relaxed. Cross-sectional transmission electron microscopy images show that a postgrowth anneal at
600
°
C
for
30
s
successfully reduces the number of dislocations threading through the metamorphic layer. Hence the top layer can be used satisfactorily as a pseudosubstrate for subsequent layer growths assuming a GaSb lattice constant.</description><identifier>ISSN: 0734-2101</identifier><identifier>ISSN: 1553-1813</identifier><identifier>EISSN: 1520-8559</identifier><identifier>DOI: 10.1116/1.2194024</identifier><identifier>CODEN: JVTAD6</identifier><language>eng</language><publisher>United States</publisher><subject>ANNEALING ; CRYSTAL GROWTH ; DISLOCATIONS ; GALLIUM ANTIMONIDES ; GALLIUM ARSENIDES ; INDIUM ARSENIDES ; INDIUM PHOSPHIDES ; LATTICE PARAMETERS ; LAYERS ; MATERIALS SCIENCE ; MOLECULAR BEAM EPITAXY ; QUANTUM WELLS ; SEMICONDUCTOR MATERIALS ; SUBSTRATES ; TRANSMISSION ELECTRON MICROSCOPY ; X-RAY DIFFRACTION</subject><ispartof>Journal of Vacuum Science and Technology. A, International Journal Devoted to Vacuum, Surfaces, and Films, 2006-05, Vol.24 (3), p.587-590</ispartof><rights>American Vacuum Society</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c327t-c3e48e249d6e84b41a61c86a0e9d436d422112481b932e2b2de5c96273440ec43</citedby><cites>FETCH-LOGICAL-c327t-c3e48e249d6e84b41a61c86a0e9d436d422112481b932e2b2de5c96273440ec43</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,776,780,790,881,4498,27901,27902</link.rule.ids><backlink>$$Uhttps://www.osti.gov/biblio/20777187$$D View this record in Osti.gov$$Hfree_for_read</backlink></links><search><creatorcontrib>Mohammedy, F. M.</creatorcontrib><creatorcontrib>Hulko, O.</creatorcontrib><creatorcontrib>Robinson, B. J.</creatorcontrib><creatorcontrib>Thompson, D. A.</creatorcontrib><creatorcontrib>Deen, M. J.</creatorcontrib><creatorcontrib>Simmons, J. G.</creatorcontrib><title>Growth and characterization of GaAsSb metamorphic samples on an InP substrate</title><title>Journal of Vacuum Science and Technology. A, International Journal Devoted to Vacuum, Surfaces, and Films</title><description>Buffer layers of
Ga
As
1
−
x
Sb
x
were grown on an InP substrate starting at
x
=
0.49
(lattice matched to InP) and increasing
x
in steps of 0.03–1.0 (GaSb), followed by a
0.5
μ
m
thick GaSb metamorphic layer. A
10
nm
thick InAs quantum well was grown on top and capped with a
100
nm
GaSb. All layers were grown using gas source molecular beam epitaxy by reducing the As flux in small steps while keeping the Sb flux fixed. The substrate temperature during growth was
∼
490
°
C
. High-Resolution x-ray diffraction analysis showed that the metamorphic layer was almost fully relaxed. Cross-sectional transmission electron microscopy images show that a postgrowth anneal at
600
°
C
for
30
s
successfully reduces the number of dislocations threading through the metamorphic layer. Hence the top layer can be used satisfactorily as a pseudosubstrate for subsequent layer growths assuming a GaSb lattice constant.</description><subject>ANNEALING</subject><subject>CRYSTAL GROWTH</subject><subject>DISLOCATIONS</subject><subject>GALLIUM ANTIMONIDES</subject><subject>GALLIUM ARSENIDES</subject><subject>INDIUM ARSENIDES</subject><subject>INDIUM PHOSPHIDES</subject><subject>LATTICE PARAMETERS</subject><subject>LAYERS</subject><subject>MATERIALS SCIENCE</subject><subject>MOLECULAR BEAM EPITAXY</subject><subject>QUANTUM WELLS</subject><subject>SEMICONDUCTOR MATERIALS</subject><subject>SUBSTRATES</subject><subject>TRANSMISSION ELECTRON MICROSCOPY</subject><subject>X-RAY DIFFRACTION</subject><issn>0734-2101</issn><issn>1553-1813</issn><issn>1520-8559</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2006</creationdate><recordtype>article</recordtype><recordid>eNqd0E9Lw0AQBfBFFKzVg99gwZNC6s5k8-9Yiq2FioJ6XjabCYk02bC7KvrpTW3Bu5eZy48H7zF2CWIGAOktzBAKKVAesQkkKKI8SYpjNhFZLCMEAafszPs3IQSiSCfsYeXsZ2i47ituGu20CeTabx1a23Nb85We--eSdxR0Z93QtIZ73Q1b8nwEuufr_on799IHpwOds5Nabz1dHP6UvS7vXhb30eZxtV7MN5GJMQvjJZkTyqJKKZelBJ2CyVMtqKhknFYSEQBlDmURI2GJFSWmSHHsIAUZGU_Z1T7X-tAqb9pApjG278kEhSLLMsizUV3vlXHWe0e1GlzbafelQKjdWgrUYa3R3uztLuy3_f_wh3V_UA1VHf8AsMx2zA</recordid><startdate>20060501</startdate><enddate>20060501</enddate><creator>Mohammedy, F. M.</creator><creator>Hulko, O.</creator><creator>Robinson, B. J.</creator><creator>Thompson, D. A.</creator><creator>Deen, M. J.</creator><creator>Simmons, J. G.</creator><scope>AAYXX</scope><scope>CITATION</scope><scope>OTOTI</scope></search><sort><creationdate>20060501</creationdate><title>Growth and characterization of GaAsSb metamorphic samples on an InP substrate</title><author>Mohammedy, F. M. ; Hulko, O. ; Robinson, B. J. ; Thompson, D. A. ; Deen, M. J. ; Simmons, J. G.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c327t-c3e48e249d6e84b41a61c86a0e9d436d422112481b932e2b2de5c96273440ec43</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2006</creationdate><topic>ANNEALING</topic><topic>CRYSTAL GROWTH</topic><topic>DISLOCATIONS</topic><topic>GALLIUM ANTIMONIDES</topic><topic>GALLIUM ARSENIDES</topic><topic>INDIUM ARSENIDES</topic><topic>INDIUM PHOSPHIDES</topic><topic>LATTICE PARAMETERS</topic><topic>LAYERS</topic><topic>MATERIALS SCIENCE</topic><topic>MOLECULAR BEAM EPITAXY</topic><topic>QUANTUM WELLS</topic><topic>SEMICONDUCTOR MATERIALS</topic><topic>SUBSTRATES</topic><topic>TRANSMISSION ELECTRON MICROSCOPY</topic><topic>X-RAY DIFFRACTION</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Mohammedy, F. M.</creatorcontrib><creatorcontrib>Hulko, O.</creatorcontrib><creatorcontrib>Robinson, B. J.</creatorcontrib><creatorcontrib>Thompson, D. A.</creatorcontrib><creatorcontrib>Deen, M. J.</creatorcontrib><creatorcontrib>Simmons, J. G.</creatorcontrib><collection>CrossRef</collection><collection>OSTI.GOV</collection><jtitle>Journal of Vacuum Science and Technology. A, International Journal Devoted to Vacuum, Surfaces, and Films</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Mohammedy, F. M.</au><au>Hulko, O.</au><au>Robinson, B. J.</au><au>Thompson, D. A.</au><au>Deen, M. J.</au><au>Simmons, J. G.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Growth and characterization of GaAsSb metamorphic samples on an InP substrate</atitle><jtitle>Journal of Vacuum Science and Technology. A, International Journal Devoted to Vacuum, Surfaces, and Films</jtitle><date>2006-05-01</date><risdate>2006</risdate><volume>24</volume><issue>3</issue><spage>587</spage><epage>590</epage><pages>587-590</pages><issn>0734-2101</issn><issn>1553-1813</issn><eissn>1520-8559</eissn><coden>JVTAD6</coden><abstract>Buffer layers of
Ga
As
1
−
x
Sb
x
were grown on an InP substrate starting at
x
=
0.49
(lattice matched to InP) and increasing
x
in steps of 0.03–1.0 (GaSb), followed by a
0.5
μ
m
thick GaSb metamorphic layer. A
10
nm
thick InAs quantum well was grown on top and capped with a
100
nm
GaSb. All layers were grown using gas source molecular beam epitaxy by reducing the As flux in small steps while keeping the Sb flux fixed. The substrate temperature during growth was
∼
490
°
C
. High-Resolution x-ray diffraction analysis showed that the metamorphic layer was almost fully relaxed. Cross-sectional transmission electron microscopy images show that a postgrowth anneal at
600
°
C
for
30
s
successfully reduces the number of dislocations threading through the metamorphic layer. Hence the top layer can be used satisfactorily as a pseudosubstrate for subsequent layer growths assuming a GaSb lattice constant.</abstract><cop>United States</cop><doi>10.1116/1.2194024</doi><tpages>4</tpages></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0734-2101 |
| ispartof | Journal of Vacuum Science and Technology. A, International Journal Devoted to Vacuum, Surfaces, and Films, 2006-05, Vol.24 (3), p.587-590 |
| issn | 0734-2101 1553-1813 1520-8559 |
| language | eng |
| recordid | cdi_scitation_primary_10_1116_1_2194024 |
| source | AIP Journals Complete |
| subjects | ANNEALING CRYSTAL GROWTH DISLOCATIONS GALLIUM ANTIMONIDES GALLIUM ARSENIDES INDIUM ARSENIDES INDIUM PHOSPHIDES LATTICE PARAMETERS LAYERS MATERIALS SCIENCE MOLECULAR BEAM EPITAXY QUANTUM WELLS SEMICONDUCTOR MATERIALS SUBSTRATES TRANSMISSION ELECTRON MICROSCOPY X-RAY DIFFRACTION |
| title | Growth and characterization of GaAsSb metamorphic samples on an InP substrate |
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