Lateral templating of self-organized ripple morphologies during focused ion beam milling of Ge
We report the use of the boundary between ion irradiated and unirradiated regions to template the lateral self-organization of nanoscale ripplelike morphological features that spontaneously evolve during uniform ion irradiation. Using uniform rastering of a 30 keV Ga + focused ion beam, up to eight...
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| Veröffentlicht in: | Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 2005-05, Vol.23 (3), p.1068-1071 |
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| Hauptverfasser: | , |
| Format: | Artikel |
| Sprache: | eng |
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