Angular dependency of off-axis illumination on 100-nm-width pattern printability for extreme ultraviolet lithography: Ru/Mo/Si reflector system
The pattern printability of the Ru/Mo/Si system was quantitatively investigated by two successive schemes, reflectivity of the mask, and aerial image intensity transferred through the system. The reflectivity of a Ru/Mo/Si reflector was calculated and compared with the value of Mo/Si reflector for v...
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| Veröffentlicht in: | Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 2004-11, Vol.22 (6), p.2984-2986 |
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| container_end_page | 2986 |
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| container_issue | 6 |
| container_start_page | 2984 |
| container_title | Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures |
| container_volume | 22 |
| creator | Kang, In-Yong Chung, Yong-Chae Ahn, Jinho Oh, Hye-Keun Watanabe, Takeo Kinoshita, Hiroo |
| description | The pattern printability of the Ru/Mo/Si system was quantitatively investigated by two successive schemes, reflectivity of the mask, and aerial image intensity transferred through the system. The reflectivity of a Ru/Mo/Si reflector was calculated and compared with the value of Mo/Si reflector for various incident angles (0°–5°) using Fresnel equation. In order to verify angular dependency of aerial image intensity in a Ru/Mo/Si reflector, we employed SOLID-EUV, which is capable of rigorous electromagnetic field computation. In the calculation, 100 nm line and space pattern was generated by 2D mask geometry with perfect absorber of opaque material. Through the investigation of the angular dependency on the pattern printability of Ru/Mo/Si and Mo/Si reflectors, we could suggest the optimal reflector system for specific condition of incident angle, i.e., Ru/Mo/Si system for
≲
3
°
and Mo/Si system for
≳
4
°
for maximizing optical performance of the EUVL system. |
| doi_str_mv | 10.1116/1.1824056 |
| format | Article |
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≲
3
°
and Mo/Si system for
≳
4
°
for maximizing optical performance of the EUVL system.</description><identifier>ISSN: 0734-211X</identifier><identifier>ISSN: 1071-1023</identifier><identifier>EISSN: 1520-8567</identifier><identifier>DOI: 10.1116/1.1824056</identifier><identifier>CODEN: JVTBD9</identifier><language>eng</language><ispartof>Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 2004-11, Vol.22 (6), p.2984-2986</ispartof><rights>American Vacuum Society</rights><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c365t-c8f7f4c6488550b3b541f17ba6e50a56e8792ecee96d37abc37c301c69b60bb93</citedby><cites>FETCH-LOGICAL-c365t-c8f7f4c6488550b3b541f17ba6e50a56e8792ecee96d37abc37c301c69b60bb93</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,778,782,792,4500,27907,27908</link.rule.ids></links><search><creatorcontrib>Kang, In-Yong</creatorcontrib><creatorcontrib>Chung, Yong-Chae</creatorcontrib><creatorcontrib>Ahn, Jinho</creatorcontrib><creatorcontrib>Oh, Hye-Keun</creatorcontrib><creatorcontrib>Watanabe, Takeo</creatorcontrib><creatorcontrib>Kinoshita, Hiroo</creatorcontrib><title>Angular dependency of off-axis illumination on 100-nm-width pattern printability for extreme ultraviolet lithography: Ru/Mo/Si reflector system</title><title>Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures</title><description>The pattern printability of the Ru/Mo/Si system was quantitatively investigated by two successive schemes, reflectivity of the mask, and aerial image intensity transferred through the system. The reflectivity of a Ru/Mo/Si reflector was calculated and compared with the value of Mo/Si reflector for various incident angles (0°–5°) using Fresnel equation. In order to verify angular dependency of aerial image intensity in a Ru/Mo/Si reflector, we employed SOLID-EUV, which is capable of rigorous electromagnetic field computation. In the calculation, 100 nm line and space pattern was generated by 2D mask geometry with perfect absorber of opaque material. Through the investigation of the angular dependency on the pattern printability of Ru/Mo/Si and Mo/Si reflectors, we could suggest the optimal reflector system for specific condition of incident angle, i.e., Ru/Mo/Si system for
≲
3
°
and Mo/Si system for
≳
4
°
for maximizing optical performance of the EUVL system.</description><issn>0734-211X</issn><issn>1071-1023</issn><issn>1520-8567</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2004</creationdate><recordtype>article</recordtype><recordid>eNp9kEtLAzEUhYMoWKsL_0G2CmmTySQz466IL6gIPsDdkMnctJF5kaS18yv8y4626EIQDtzF_e7hnoPQKaMTxpicsglLo5gKuYdGTESUpEIm-2hEEx6TiLHXQ3Tk_RulVArOR-hj1ixWlXK4hA6aEhrd49YMMkRtrMe2qla1bVSwbYMHMUpJU5N3W4Yl7lQI4BrcOdsEVdjKhh6b1mHYBAc14FUVnFrbtoKAh-WyXTjVLfsL_Lia3rfTJ4sdmAp0GG587wPUx-jAqMrDyW6O0cv11fPlLZk_3NxdzuZEcykC0alJTKxlnKZC0IIXImaGJYWSIKgSEtIki0ADZLLkiSo0TzSnTMuskLQoMj5GZ1tf7Vrvhy_yIUStXJ8zmn81mbN81-TAnm9Zr234buIHXrfuF8y70vwH_3X-BMpqhWI</recordid><startdate>200411</startdate><enddate>200411</enddate><creator>Kang, In-Yong</creator><creator>Chung, Yong-Chae</creator><creator>Ahn, Jinho</creator><creator>Oh, Hye-Keun</creator><creator>Watanabe, Takeo</creator><creator>Kinoshita, Hiroo</creator><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>200411</creationdate><title>Angular dependency of off-axis illumination on 100-nm-width pattern printability for extreme ultraviolet lithography: Ru/Mo/Si reflector system</title><author>Kang, In-Yong ; Chung, Yong-Chae ; Ahn, Jinho ; Oh, Hye-Keun ; Watanabe, Takeo ; Kinoshita, Hiroo</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c365t-c8f7f4c6488550b3b541f17ba6e50a56e8792ecee96d37abc37c301c69b60bb93</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2004</creationdate><toplevel>online_resources</toplevel><creatorcontrib>Kang, In-Yong</creatorcontrib><creatorcontrib>Chung, Yong-Chae</creatorcontrib><creatorcontrib>Ahn, Jinho</creatorcontrib><creatorcontrib>Oh, Hye-Keun</creatorcontrib><creatorcontrib>Watanabe, Takeo</creatorcontrib><creatorcontrib>Kinoshita, Hiroo</creatorcontrib><collection>CrossRef</collection><jtitle>Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Kang, In-Yong</au><au>Chung, Yong-Chae</au><au>Ahn, Jinho</au><au>Oh, Hye-Keun</au><au>Watanabe, Takeo</au><au>Kinoshita, Hiroo</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Angular dependency of off-axis illumination on 100-nm-width pattern printability for extreme ultraviolet lithography: Ru/Mo/Si reflector system</atitle><jtitle>Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures</jtitle><date>2004-11</date><risdate>2004</risdate><volume>22</volume><issue>6</issue><spage>2984</spage><epage>2986</epage><pages>2984-2986</pages><issn>0734-211X</issn><issn>1071-1023</issn><eissn>1520-8567</eissn><coden>JVTBD9</coden><abstract>The pattern printability of the Ru/Mo/Si system was quantitatively investigated by two successive schemes, reflectivity of the mask, and aerial image intensity transferred through the system. The reflectivity of a Ru/Mo/Si reflector was calculated and compared with the value of Mo/Si reflector for various incident angles (0°–5°) using Fresnel equation. In order to verify angular dependency of aerial image intensity in a Ru/Mo/Si reflector, we employed SOLID-EUV, which is capable of rigorous electromagnetic field computation. In the calculation, 100 nm line and space pattern was generated by 2D mask geometry with perfect absorber of opaque material. Through the investigation of the angular dependency on the pattern printability of Ru/Mo/Si and Mo/Si reflectors, we could suggest the optimal reflector system for specific condition of incident angle, i.e., Ru/Mo/Si system for
≲
3
°
and Mo/Si system for
≳
4
°
for maximizing optical performance of the EUVL system.</abstract><doi>10.1116/1.1824056</doi><tpages>3</tpages></addata></record> |
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| ispartof | Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 2004-11, Vol.22 (6), p.2984-2986 |
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| source | AIP Journals Complete |
| title | Angular dependency of off-axis illumination on 100-nm-width pattern printability for extreme ultraviolet lithography: Ru/Mo/Si reflector system |
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