Electron trapping in metal-insulator-semiconductor structures on n - GaN with SiO 2 and Si 3 N 4 dielectrics

Electron trapping in Al -gate n - GaN ∕ nitrided-thin- Ga 2 O 3 ∕ SiO 2 and n - GaN ∕ Si 3 N 4 MIS capacitors was evaluated by capacitance-voltage ( C – V ) measurements. Significant positive flatband voltage shift ( Δ V fb ) was observed with increasing starting dc bias in the C – V measurements. F...

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Veröffentlicht in:Journal of vacuum science & technology. A, Vacuum, surfaces, and films Vacuum, surfaces, and films, 2004-11, Vol.22 (6), p.2379-2383
Hauptverfasser: Bae, Choelhwyi, Krug, Cristiano, Lucovsky, Gerald
Format: Artikel
Sprache:eng
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