Mechanisms of current collapse and gate leakage currents in AlGaN/GaN heterostructure field effect transistors

In order to clarify the mechanisms of drain current collapse and gate leakage currents in the AlGaN/GaN heterostructure field effect transistor (HFET), detailed electrical properties of the ungated portion and Schottky-gated portion of the device were investigated separately, using a gateless HFET s...

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Veröffentlicht in:	Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 2003-07, Vol.21 (4), p.1844-1855
Hauptverfasser:	Hasegawa, Hideki, Inagaki, Takanori, Ootomo, Shinya, Hashizume, Tamotsu
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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