Fabrication and characteristics of lateral type GaN field-emission arrays using metalorganic chemical vapor deposition

Lateral type GaN field-emission diodes were fabricated by metalorganic chemical vapor deposition. In forming the pattern, two kinds of procedures were proposed: a selective etching method with electron cyclotron resonance-reactive ion etching (ECR-RIE) or a simple selective growth utilizing Si 3 N 4...

Ausführliche Beschreibung

Bibliographische Detailangaben

Veröffentlicht in:	Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 2003-07, Vol.21 (4), p.1566-1569
Hauptverfasser:	Lee, Jae-Hoon, Lee, Myoung-Bok, Hahm, Sung-Ho, Lee, Jung-Hee, Kim, Jin-Sup, Choi, Kyu-Man, Kim, Yeo-Hwan
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!