Effects of metal buffer layers on the hot filament chemical vapor deposition of nanostructured carbon films
We examined how the addition of different metal buffer layers between the Ni/Fe-alloy-catalyst layer and the silicon substrate affected the growth of nanostructured carbon films; Cr, Ti, Ta, and W were tested as buffer layers. Even when the sputter-deposition of catalytic-metal layers and the hot fi...
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Veröffentlicht in: | Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 2003-01, Vol.21 (1), p.623-626 |
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container_title | Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures |
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creator | Lee, Kyung Moon Han, Hyung Jun Choi, Seungho Park, Kyung Ho Oh, Soo-ghee Lee, Soonil Koh, Ken Ha |
description | We examined how the addition of different metal buffer layers between the Ni/Fe-alloy-catalyst layer and the silicon substrate affected the growth of nanostructured carbon films; Cr, Ti, Ta, and W were tested as buffer layers. Even when the sputter-deposition of catalytic-metal layers and the hot filament chemical vapor deposition of carbon films were carried out under the identical conditions, different buffer layers resulted in substantially different carbon-film growth. More specifically, carbon-nanoparticle films were produced with the Cr and the W buffer layers, and carbon-nanotube films were produced with the Ti and the Ta buffer layers. X-ray diffraction (XRD) showed a significant and systematic difference between the carbon-nanoparticle and carbon-nanotube films. In the case of the carbon-nanoparticle films deposited with either the Cr or the W buffer layer, the peaks corresponding to the catalytic metal, the carbide phases of the catalytic metal, and the carbide phases of the respective buffer metal were observed. However, in the case of the carbon-nanotube films deposited with either the Ti or the Ta buffer layer, the peaks corresponding to the carbide phases of the catalytic metal and the silicide phases of the respective buffer metal were observed. Moreover, scanning electron microscopy (SEM) images of the cross sections of the films showed the difference in the interface structure and its deposition-time-dependent change. Based on the XRD and cross-section SEM observations, we proposed a model that could account for the growth of different nanostructured carbon films on the different sets of buffer layers. |
doi_str_mv | 10.1116/1.1524136 |
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Even when the sputter-deposition of catalytic-metal layers and the hot filament chemical vapor deposition of carbon films were carried out under the identical conditions, different buffer layers resulted in substantially different carbon-film growth. More specifically, carbon-nanoparticle films were produced with the Cr and the W buffer layers, and carbon-nanotube films were produced with the Ti and the Ta buffer layers. X-ray diffraction (XRD) showed a significant and systematic difference between the carbon-nanoparticle and carbon-nanotube films. In the case of the carbon-nanoparticle films deposited with either the Cr or the W buffer layer, the peaks corresponding to the catalytic metal, the carbide phases of the catalytic metal, and the carbide phases of the respective buffer metal were observed. However, in the case of the carbon-nanotube films deposited with either the Ti or the Ta buffer layer, the peaks corresponding to the carbide phases of the catalytic metal and the silicide phases of the respective buffer metal were observed. Moreover, scanning electron microscopy (SEM) images of the cross sections of the films showed the difference in the interface structure and its deposition-time-dependent change. Based on the XRD and cross-section SEM observations, we proposed a model that could account for the growth of different nanostructured carbon films on the different sets of buffer layers.</description><identifier>ISSN: 0734-211X</identifier><identifier>ISSN: 1071-1023</identifier><identifier>EISSN: 1520-8567</identifier><identifier>DOI: 10.1116/1.1524136</identifier><identifier>CODEN: JVTBD9</identifier><language>eng</language><ispartof>Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 2003-01, Vol.21 (1), p.623-626</ispartof><rights>American Vacuum Society</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c363t-2b96fbf4031c931ee2d101cf0d5a34cb7ca08d8899c8e313c1698db9fca83b833</citedby><cites>FETCH-LOGICAL-c363t-2b96fbf4031c931ee2d101cf0d5a34cb7ca08d8899c8e313c1698db9fca83b833</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>309,310,314,780,784,789,790,794,4502,23921,23922,25131,27915,27916</link.rule.ids></links><search><creatorcontrib>Lee, Kyung Moon</creatorcontrib><creatorcontrib>Han, Hyung Jun</creatorcontrib><creatorcontrib>Choi, Seungho</creatorcontrib><creatorcontrib>Park, Kyung Ho</creatorcontrib><creatorcontrib>Oh, Soo-ghee</creatorcontrib><creatorcontrib>Lee, Soonil</creatorcontrib><creatorcontrib>Koh, Ken Ha</creatorcontrib><title>Effects of metal buffer layers on the hot filament chemical vapor deposition of nanostructured carbon films</title><title>Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures</title><description>We examined how the addition of different metal buffer layers between the Ni/Fe-alloy-catalyst layer and the silicon substrate affected the growth of nanostructured carbon films; Cr, Ti, Ta, and W were tested as buffer layers. Even when the sputter-deposition of catalytic-metal layers and the hot filament chemical vapor deposition of carbon films were carried out under the identical conditions, different buffer layers resulted in substantially different carbon-film growth. More specifically, carbon-nanoparticle films were produced with the Cr and the W buffer layers, and carbon-nanotube films were produced with the Ti and the Ta buffer layers. X-ray diffraction (XRD) showed a significant and systematic difference between the carbon-nanoparticle and carbon-nanotube films. In the case of the carbon-nanoparticle films deposited with either the Cr or the W buffer layer, the peaks corresponding to the catalytic metal, the carbide phases of the catalytic metal, and the carbide phases of the respective buffer metal were observed. However, in the case of the carbon-nanotube films deposited with either the Ti or the Ta buffer layer, the peaks corresponding to the carbide phases of the catalytic metal and the silicide phases of the respective buffer metal were observed. Moreover, scanning electron microscopy (SEM) images of the cross sections of the films showed the difference in the interface structure and its deposition-time-dependent change. Based on the XRD and cross-section SEM observations, we proposed a model that could account for the growth of different nanostructured carbon films on the different sets of buffer layers.</description><issn>0734-211X</issn><issn>1071-1023</issn><issn>1520-8567</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2003</creationdate><recordtype>article</recordtype><recordid>eNp9kE9LAzEQxYMoWKsHv0GuClszm900e5RSq1DwouBtSSYJXd1_JGmh396UFj0InmZ485sH7xFyC2wGAOIBZlDmBXBxRiZpY5ksxfycTNicF1kO8HFJrkL4ZIyJkvMJ-Vo6ZzEGOjja2ahaqrdJ8bRVe-uT3NO4sXQzROqaVnW2jxQ3tmswoTs1Dp4aOw6hiU1Ck0mv-iFEv8W49dZQVF6nQ_rtwjW5cKoN9uY0p-T9afm2eM7Wr6uXxeM6Qy54zHJdCaddwThgxcHa3AADdMyUiheo56iYNFJWFUrLgSOIShpdOVSSa8n5lNwdfdEPIXjr6tE3nfL7Glh9aKmG-tRSYu-PbMAmqkOIH3g3-F-wHo37D_7r_A06qXgH</recordid><startdate>200301</startdate><enddate>200301</enddate><creator>Lee, Kyung Moon</creator><creator>Han, Hyung Jun</creator><creator>Choi, Seungho</creator><creator>Park, Kyung Ho</creator><creator>Oh, Soo-ghee</creator><creator>Lee, Soonil</creator><creator>Koh, Ken Ha</creator><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>200301</creationdate><title>Effects of metal buffer layers on the hot filament chemical vapor deposition of nanostructured carbon films</title><author>Lee, Kyung Moon ; Han, Hyung Jun ; Choi, Seungho ; Park, Kyung Ho ; Oh, Soo-ghee ; Lee, Soonil ; Koh, Ken Ha</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c363t-2b96fbf4031c931ee2d101cf0d5a34cb7ca08d8899c8e313c1698db9fca83b833</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2003</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Lee, Kyung Moon</creatorcontrib><creatorcontrib>Han, Hyung Jun</creatorcontrib><creatorcontrib>Choi, Seungho</creatorcontrib><creatorcontrib>Park, Kyung Ho</creatorcontrib><creatorcontrib>Oh, Soo-ghee</creatorcontrib><creatorcontrib>Lee, Soonil</creatorcontrib><creatorcontrib>Koh, Ken Ha</creatorcontrib><collection>CrossRef</collection><jtitle>Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Lee, Kyung Moon</au><au>Han, Hyung Jun</au><au>Choi, Seungho</au><au>Park, Kyung Ho</au><au>Oh, Soo-ghee</au><au>Lee, Soonil</au><au>Koh, Ken Ha</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Effects of metal buffer layers on the hot filament chemical vapor deposition of nanostructured carbon films</atitle><jtitle>Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures</jtitle><date>2003-01</date><risdate>2003</risdate><volume>21</volume><issue>1</issue><spage>623</spage><epage>626</epage><pages>623-626</pages><issn>0734-211X</issn><issn>1071-1023</issn><eissn>1520-8567</eissn><coden>JVTBD9</coden><abstract>We examined how the addition of different metal buffer layers between the Ni/Fe-alloy-catalyst layer and the silicon substrate affected the growth of nanostructured carbon films; Cr, Ti, Ta, and W were tested as buffer layers. Even when the sputter-deposition of catalytic-metal layers and the hot filament chemical vapor deposition of carbon films were carried out under the identical conditions, different buffer layers resulted in substantially different carbon-film growth. More specifically, carbon-nanoparticle films were produced with the Cr and the W buffer layers, and carbon-nanotube films were produced with the Ti and the Ta buffer layers. X-ray diffraction (XRD) showed a significant and systematic difference between the carbon-nanoparticle and carbon-nanotube films. In the case of the carbon-nanoparticle films deposited with either the Cr or the W buffer layer, the peaks corresponding to the catalytic metal, the carbide phases of the catalytic metal, and the carbide phases of the respective buffer metal were observed. However, in the case of the carbon-nanotube films deposited with either the Ti or the Ta buffer layer, the peaks corresponding to the carbide phases of the catalytic metal and the silicide phases of the respective buffer metal were observed. Moreover, scanning electron microscopy (SEM) images of the cross sections of the films showed the difference in the interface structure and its deposition-time-dependent change. Based on the XRD and cross-section SEM observations, we proposed a model that could account for the growth of different nanostructured carbon films on the different sets of buffer layers.</abstract><doi>10.1116/1.1524136</doi><tpages>4</tpages></addata></record> |
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title | Effects of metal buffer layers on the hot filament chemical vapor deposition of nanostructured carbon films |
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