Limitations of focused ion beam nanomachining

In this article, some limitations of the processing of structures with dimensions in the nanometer range by focused ion beams will be discussed. In order to enable exact depth control of nanometer structures, the effective sputter yield of silicon was determined as function of the ion dose. At ion d...

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Veröffentlicht in:	Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 2001-11, Vol.19 (6), p.2533-2538
Hauptverfasser:	Lehrer, C., Frey, L., Petersen, S., Ryssel, H.
Format:	Artikel
Sprache:	eng
Schlagworte:	Atomic force microscopy Computer simulation Ion implantation Machining Monte Carlo methods Nanostructured materials Nanotechnology Sputtering Surface structure Transmission electron microscopy
Online-Zugang:	Volltext
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