Synthesis of BN x – SiN y composite films by multisource plasma chemical vapor deposition
BN x – SiN y composite films were deposited by a multisource plasma chemical vapor deposition (PCVD). Two plasma generators, A and B, were implemented. BF 3 and NH 3 gases introduced to plasma generator A were separately decomposed by two rf electrodes, respectively. SiH 4 and NH 3 gases were also s...
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| Veröffentlicht in: | Journal of vacuum science & technology. A, Vacuum, surfaces, and films Vacuum, surfaces, and films, 2001-09, Vol.19 (5), p.2039-2042 |
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| Sprache: | eng |
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| container_end_page | 2042 |
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| container_issue | 5 |
| container_start_page | 2039 |
| container_title | Journal of vacuum science & technology. A, Vacuum, surfaces, and films |
| container_volume | 19 |
| creator | Nonogaki, Ryozo Yamada, Suzuya Ibukiyama, Masahiro Wada, Tetsuya |
| description | BN
x
–
SiN
y
composite films were deposited by a multisource plasma chemical vapor deposition (PCVD). Two plasma generators, A and B, were implemented.
BF
3
and
NH
3
gases introduced to plasma generator A were separately decomposed by two rf electrodes, respectively.
SiH
4
and
NH
3
gases were also separately decomposed in the plasma generator B. Widely spread sheet-like plasma generated by a dc arc plasma gun above the substrate and under a magnetic field also excited the gas in front of the substrate. By this CVD system, the composition of the
BN
x
–
SiN
y
films can be controlled, and the
BN
x
–
SiN
y
films with several atomic percent of silicon are found to have higher hardness and higher electrical resistivity than
BN
x
film. |
| doi_str_mv | 10.1116/1.1371325 |
| format | Article |
| fullrecord | <record><control><sourceid>scitation</sourceid><recordid>TN_cdi_scitation_primary_10_1116_1_1371325</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>scitation_primary_10_1116_1_1371325</sourcerecordid><originalsourceid>FETCH-scitation_primary_10_1116_1_13713253</originalsourceid><addsrcrecordid>eNqtzj1OAzEQhmELgcTyU3CDqZE2zNhsAi0IRJUmdBSWcbzKIDu2PJuI7bgDN-QkKChSLkD1Nc8nvUpdEU6IaHpDEzIzMro7Ug11Gtu7rrs_Vg3OzG2rCelUnYl8IKLWOG3U22JcD6sgLJB7eJjDJ_x8fcOC5zCCz6lk4SFAzzEJvI-QNnFgyZvqA5ToJDnwq5DYuwhbV3KFZfj7cF5fqJPeRQmX-z1X189Pr48vrXge3E7YUjm5OlpCu8u3ZPf55r_wNtcDtGXZm19sF1qK</addsrcrecordid><sourcetype>Enrichment Source</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Synthesis of BN x – SiN y composite films by multisource plasma chemical vapor deposition</title><source>AIP Journals Complete</source><creator>Nonogaki, Ryozo ; Yamada, Suzuya ; Ibukiyama, Masahiro ; Wada, Tetsuya</creator><creatorcontrib>Nonogaki, Ryozo ; Yamada, Suzuya ; Ibukiyama, Masahiro ; Wada, Tetsuya</creatorcontrib><description>BN
x
–
SiN
y
composite films were deposited by a multisource plasma chemical vapor deposition (PCVD). Two plasma generators, A and B, were implemented.
BF
3
and
NH
3
gases introduced to plasma generator A were separately decomposed by two rf electrodes, respectively.
SiH
4
and
NH
3
gases were also separately decomposed in the plasma generator B. Widely spread sheet-like plasma generated by a dc arc plasma gun above the substrate and under a magnetic field also excited the gas in front of the substrate. By this CVD system, the composition of the
BN
x
–
SiN
y
films can be controlled, and the
BN
x
–
SiN
y
films with several atomic percent of silicon are found to have higher hardness and higher electrical resistivity than
BN
x
film.</description><identifier>ISSN: 0734-2101</identifier><identifier>EISSN: 1520-8559</identifier><identifier>DOI: 10.1116/1.1371325</identifier><identifier>CODEN: JVTAD6</identifier><language>eng</language><ispartof>Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 2001-09, Vol.19 (5), p.2039-2042</ispartof><rights>American Vacuum Society</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,776,780,790,4497,27903,27904</link.rule.ids></links><search><creatorcontrib>Nonogaki, Ryozo</creatorcontrib><creatorcontrib>Yamada, Suzuya</creatorcontrib><creatorcontrib>Ibukiyama, Masahiro</creatorcontrib><creatorcontrib>Wada, Tetsuya</creatorcontrib><title>Synthesis of BN x – SiN y composite films by multisource plasma chemical vapor deposition</title><title>Journal of vacuum science & technology. A, Vacuum, surfaces, and films</title><description>BN
x
–
SiN
y
composite films were deposited by a multisource plasma chemical vapor deposition (PCVD). Two plasma generators, A and B, were implemented.
BF
3
and
NH
3
gases introduced to plasma generator A were separately decomposed by two rf electrodes, respectively.
SiH
4
and
NH
3
gases were also separately decomposed in the plasma generator B. Widely spread sheet-like plasma generated by a dc arc plasma gun above the substrate and under a magnetic field also excited the gas in front of the substrate. By this CVD system, the composition of the
BN
x
–
SiN
y
films can be controlled, and the
BN
x
–
SiN
y
films with several atomic percent of silicon are found to have higher hardness and higher electrical resistivity than
BN
x
film.</description><issn>0734-2101</issn><issn>1520-8559</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2001</creationdate><recordtype>article</recordtype><sourceid/><recordid>eNqtzj1OAzEQhmELgcTyU3CDqZE2zNhsAi0IRJUmdBSWcbzKIDu2PJuI7bgDN-QkKChSLkD1Nc8nvUpdEU6IaHpDEzIzMro7Ug11Gtu7rrs_Vg3OzG2rCelUnYl8IKLWOG3U22JcD6sgLJB7eJjDJ_x8fcOC5zCCz6lk4SFAzzEJvI-QNnFgyZvqA5ToJDnwq5DYuwhbV3KFZfj7cF5fqJPeRQmX-z1X189Pr48vrXge3E7YUjm5OlpCu8u3ZPf55r_wNtcDtGXZm19sF1qK</recordid><startdate>200109</startdate><enddate>200109</enddate><creator>Nonogaki, Ryozo</creator><creator>Yamada, Suzuya</creator><creator>Ibukiyama, Masahiro</creator><creator>Wada, Tetsuya</creator><scope/></search><sort><creationdate>200109</creationdate><title>Synthesis of BN x – SiN y composite films by multisource plasma chemical vapor deposition</title><author>Nonogaki, Ryozo ; Yamada, Suzuya ; Ibukiyama, Masahiro ; Wada, Tetsuya</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-scitation_primary_10_1116_1_13713253</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2001</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Nonogaki, Ryozo</creatorcontrib><creatorcontrib>Yamada, Suzuya</creatorcontrib><creatorcontrib>Ibukiyama, Masahiro</creatorcontrib><creatorcontrib>Wada, Tetsuya</creatorcontrib><jtitle>Journal of vacuum science & technology. A, Vacuum, surfaces, and films</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Nonogaki, Ryozo</au><au>Yamada, Suzuya</au><au>Ibukiyama, Masahiro</au><au>Wada, Tetsuya</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Synthesis of BN x – SiN y composite films by multisource plasma chemical vapor deposition</atitle><jtitle>Journal of vacuum science & technology. A, Vacuum, surfaces, and films</jtitle><date>2001-09</date><risdate>2001</risdate><volume>19</volume><issue>5</issue><spage>2039</spage><epage>2042</epage><pages>2039-2042</pages><issn>0734-2101</issn><eissn>1520-8559</eissn><coden>JVTAD6</coden><abstract>BN
x
–
SiN
y
composite films were deposited by a multisource plasma chemical vapor deposition (PCVD). Two plasma generators, A and B, were implemented.
BF
3
and
NH
3
gases introduced to plasma generator A were separately decomposed by two rf electrodes, respectively.
SiH
4
and
NH
3
gases were also separately decomposed in the plasma generator B. Widely spread sheet-like plasma generated by a dc arc plasma gun above the substrate and under a magnetic field also excited the gas in front of the substrate. By this CVD system, the composition of the
BN
x
–
SiN
y
films can be controlled, and the
BN
x
–
SiN
y
films with several atomic percent of silicon are found to have higher hardness and higher electrical resistivity than
BN
x
film.</abstract><doi>10.1116/1.1371325</doi><tpages>4</tpages></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0734-2101 |
| ispartof | Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 2001-09, Vol.19 (5), p.2039-2042 |
| issn | 0734-2101 1520-8559 |
| language | eng |
| recordid | cdi_scitation_primary_10_1116_1_1371325 |
| source | AIP Journals Complete |
| title | Synthesis of BN x – SiN y composite films by multisource plasma chemical vapor deposition |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-26T23%3A20%3A24IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-scitation&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Synthesis%20of%20BN%20x%20%E2%80%93%20SiN%20y%20composite%20films%20by%20multisource%20plasma%20chemical%20vapor%20deposition&rft.jtitle=Journal%20of%20vacuum%20science%20&%20technology.%20A,%20Vacuum,%20surfaces,%20and%20films&rft.au=Nonogaki,%20Ryozo&rft.date=2001-09&rft.volume=19&rft.issue=5&rft.spage=2039&rft.epage=2042&rft.pages=2039-2042&rft.issn=0734-2101&rft.eissn=1520-8559&rft.coden=JVTAD6&rft_id=info:doi/10.1116/1.1371325&rft_dat=%3Cscitation%3Escitation_primary_10_1116_1_1371325%3C/scitation%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |