Molecular dynamics simulations of ion self-sputtering of Ni and Al surfaces

We present results of molecular dynamics simulations of Ni + impacting Ni(111) and Al + impacting Al (111) and amorphous Al surfaces. Sputter yields and sticking probabilities were calculated as a function of ion fluence, impact angle (0–90°) and energy (25–150 eV). We find that the simulated sputte...

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Veröffentlicht in:Journal of vacuum science & technology. A, Vacuum, surfaces, and films Vacuum, surfaces, and films, 2001-05, Vol.19 (3), p.820-825
Hauptverfasser: Hanson, D. E., Stephens, B. C., Saravanan, C., Kress, J. D.
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container_issue 3
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container_title Journal of vacuum science & technology. A, Vacuum, surfaces, and films
container_volume 19
creator Hanson, D. E.
Stephens, B. C.
Saravanan, C.
Kress, J. D.
description We present results of molecular dynamics simulations of Ni + impacting Ni(111) and Al + impacting Al (111) and amorphous Al surfaces. Sputter yields and sticking probabilities were calculated as a function of ion fluence, impact angle (0–90°) and energy (25–150 eV). We find that the simulated sputter yields are in reasonable agreement with experiments and a commonly used empirical formula. For Al + impacting at normal incidence, sputter yields were approximately the same for both Al(111) and amorphous Al. The initial penetration depth exhibited a linear dependence with velocity, and was approximately the same for both Al + /Al(111) and Ni + /Ni(111) if the distances were scaled by the lattice constants. The average calculated time between ion impact and atom ejection was less than 25 fs for 100 eV Ni + /Si(111) sputter events.
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subjects Aluminum
Atoms
Boundary conditions
Ions
Lattice constants
Nickel deposits
Physical vapor deposition
Sputtering
Substrates
title Molecular dynamics simulations of ion self-sputtering of Ni and Al surfaces
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