Full voltage control of giant magnetoresistance
The aim of voltage control of magnetism is to reduce the power consumption of spintronic devices. For a spin valve, the relative magnetic orientation for the two ferromagnetic layers is a key factor determining the giant magnetoresistance (GMR) ratio. However, achieving full voltage manipulation of...
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| Veröffentlicht in: | Applied physics letters 2024-12, Vol.125 (26) |
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| container_issue | 26 |
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| container_title | Applied physics letters |
| container_volume | 125 |
| creator | Wei, Lujun Zhang, Yiyang Huang, Fei Niu, Wei Li, Feng Yang, Jiaju Peng, Jincheng Li, Yanghui Lu, Yu Chen, Jiarui Wang, Weihao Liu, Tianyu Pu, Yong Du, Jun |
| description | The aim of voltage control of magnetism is to reduce the power consumption of spintronic devices. For a spin valve, the relative magnetic orientation for the two ferromagnetic layers is a key factor determining the giant magnetoresistance (GMR) ratio. However, achieving full voltage manipulation of the magnetization directions between parallel and antiparallel states is a significant challenge. Here, we demonstrate that by utilizing two exchange-biased Co/IrMn bilayers with opposite pinning directions and with ferromagnetic interlayer coupling between the two Co layers, the magnetization alignment of the two Co layers of a spin valve can be switched between antiparallel and nearly parallel states by voltage-induced strain, leading to a full voltage control of GMR in a repeatable manner. The magnetization rotating processes for the two Co layers under different voltages can be clearly demonstrated by simulations based on the Landau–Lifshitz–Gilbert equation. This work provides valuable references for the development of full voltage-controlled spintronic devices with low energy consumption. |
| doi_str_mv | 10.1063/5.0246117 |
| format | Article |
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For a spin valve, the relative magnetic orientation for the two ferromagnetic layers is a key factor determining the giant magnetoresistance (GMR) ratio. However, achieving full voltage manipulation of the magnetization directions between parallel and antiparallel states is a significant challenge. Here, we demonstrate that by utilizing two exchange-biased Co/IrMn bilayers with opposite pinning directions and with ferromagnetic interlayer coupling between the two Co layers, the magnetization alignment of the two Co layers of a spin valve can be switched between antiparallel and nearly parallel states by voltage-induced strain, leading to a full voltage control of GMR in a repeatable manner. The magnetization rotating processes for the two Co layers under different voltages can be clearly demonstrated by simulations based on the Landau–Lifshitz–Gilbert equation. 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For a spin valve, the relative magnetic orientation for the two ferromagnetic layers is a key factor determining the giant magnetoresistance (GMR) ratio. However, achieving full voltage manipulation of the magnetization directions between parallel and antiparallel states is a significant challenge. Here, we demonstrate that by utilizing two exchange-biased Co/IrMn bilayers with opposite pinning directions and with ferromagnetic interlayer coupling between the two Co layers, the magnetization alignment of the two Co layers of a spin valve can be switched between antiparallel and nearly parallel states by voltage-induced strain, leading to a full voltage control of GMR in a repeatable manner. The magnetization rotating processes for the two Co layers under different voltages can be clearly demonstrated by simulations based on the Landau–Lifshitz–Gilbert equation. 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For a spin valve, the relative magnetic orientation for the two ferromagnetic layers is a key factor determining the giant magnetoresistance (GMR) ratio. However, achieving full voltage manipulation of the magnetization directions between parallel and antiparallel states is a significant challenge. Here, we demonstrate that by utilizing two exchange-biased Co/IrMn bilayers with opposite pinning directions and with ferromagnetic interlayer coupling between the two Co layers, the magnetization alignment of the two Co layers of a spin valve can be switched between antiparallel and nearly parallel states by voltage-induced strain, leading to a full voltage control of GMR in a repeatable manner. The magnetization rotating processes for the two Co layers under different voltages can be clearly demonstrated by simulations based on the Landau–Lifshitz–Gilbert equation. This work provides valuable references for the development of full voltage-controlled spintronic devices with low energy consumption.</abstract><cop>Melville</cop><pub>American Institute of Physics</pub><doi>10.1063/5.0246117</doi><tpages>7</tpages><orcidid>https://orcid.org/0000-0003-3100-7216</orcidid><orcidid>https://orcid.org/0000-0002-9571-5281</orcidid><orcidid>https://orcid.org/0009-0003-8950-6277</orcidid><orcidid>https://orcid.org/0009-0004-5166-3370</orcidid><orcidid>https://orcid.org/0000-0002-9967-945X</orcidid><orcidid>https://orcid.org/0000-0002-4331-0928</orcidid><orcidid>https://orcid.org/0000-0001-7729-1043</orcidid><orcidid>https://orcid.org/0000-0003-2638-2185</orcidid></addata></record> |
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| source | AIP Journals Complete |
| subjects | Control valves Electric potential Electrons Energy consumption Ferromagnetism Giant magnetoresistance Interlayers Magnetization Magnetoresistivity Spin valves Voltage |
| title | Full voltage control of giant magnetoresistance |
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