Strain engineering of ferroelectric polarization and domain in the two-dimensional multiferroic semiconductor

Two-dimensional (2D) ferroelectricity has attracted great interest for its potential to develop various flexible and stretchable ultra-thin smart devices. The ultra-thin nature of 2D materials makes domain control very challenging, as an external electric field inevitably leads to leakage currents a...

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Veröffentlicht in:	Applied physics letters 2024-11, Vol.125 (21)
Hauptverfasser:	Gao, Lijing, Chen, Xiaofang, Qi, Jingshan
Format:	Artikel
Sprache:	eng
Schlagworte:	Control methods Domain walls Electric fields Feasibility Ferroelasticity Ferroelectric materials Ferroelectricity Leakage current Multiferroic materials Polarization Shear strain Two dimensional materials
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