Silicon-based light-emitting transistor with Ge(Si) nanoislands embedded in a photonic crystal: Control of the spectrum and spatial distribution of the emission

Light-emitting transistors (LETs) represent the next step in the development of light-emitting diodes (LEDs), offering additional control over emission. In this work, the transport properties and spatial distribution of electroluminescence (EL) in the spectral range of 1.2–1.7 μm were studied for la...

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Veröffentlicht in:	Applied physics letters 2024-12, Vol.125 (23)
Hauptverfasser:	Yablonskiy, A. N., Shmagin, V. B., Zakharov, V. E., Yurasov, D. V., Shaleev, M. V., Demidov, E. V., Mikhaylov, A. N., Tetelbaum, D. I., Rodyakina, E. E., Morozova, E. E., Shengurov, D. V., Kraev, S. A., Novikov, A. V.
Format:	Artikel
Sprache:	eng
Schlagworte:	Electric potential Embedding Emission Germanium Hole conductivity Light emitting diodes Near infrared radiation Optoelectronic devices Photonic crystals Self-assembly Silicon substrates Spatial distribution Spectral emittance Transistors Transport properties Voltage
Online-Zugang:	Volltext
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