Residual strain optimization in 3D MOSFET structures for enhanced mobility via nanoscale heat transfer

This study addresses the optimization of strain in continuous MOSFET downscaling, particularly at the nanoscale, where traditional Fourier models fail due to non-diffusive phonon transport effects. We introduce a multi-physics simulation approach that combines Finite Element Method (FEM) and Density...

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Veröffentlicht in:	Journal of applied physics 2025-01, Vol.137 (1)
Hauptverfasser:	Hong, Ji Hoon, Kang, Min Sung, Ha, Inho, Park, Hong-Lae, Park, Kyungwook, Jeon, Joohyun, Yoo, Wonseok, Kim, Jueun, Chung, Chunhyung, Park, Sung Min, Cho, Sung Beom
Format:	Artikel
Sprache:	eng
Schlagworte:	Density functional theory Finite element method Heat transfer MOSFETs Optimization Semiconductor devices
Online-Zugang:	Volltext
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