Study of the recrystallization behaviors induced by annealing and irradiation on amorphous SiC

Silicon carbide and its derivatives are promising materials with potential applications in various types of nuclear reactors. To better understand their characteristics, this paper investigates the recrystallization behavior of amorphous SiC prepared through pre-irradiation using 800 keV Kr2+. Follo...

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Veröffentlicht in:	Journal of applied physics 2025-01, Vol.137 (1)
Hauptverfasser:	Zhang, Zijun, Jiang, Shengming, Hu, Xiaotian, Zhang, Jian
Format:	Artikel
Sprache:	eng
Schlagworte:	Amorphous materials Amorphous silicon Annealing Bubbles Crystal defects Defect annealing Diffusion Epitaxial growth Helium Nanocrystals Nuclear reactors Radiation dosage Raman spectra Recrystallization Silicon carbide
Online-Zugang:	Volltext
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