P-type NiOX dielectric-based CMOS inverter logic gate using enhancement-mode GaN nMOS and diamond pMOS transistors

We have demonstrated a complementary metal-oxide-semiconductor inverter logic gate by heterogeneous integration of an enhancement-mode n-channel transistor on GaN and a p-channel transistor on diamond. A thermally grown p-type NiOx is used as the dielectric, and Ni/Au is the gate metal for both tran...

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