Variable range hopping-assisted parasitic channel leakage in AlN/GaN/AlGaN HEMTs on Si

This work investigates the off-state leakage characteristics of AlN/GaN/AlGaN high electron mobility transistors (HEMTs) on Si substrate with varying mesa depths and uncovers the existence of a parasitic channel associated with the AlGaN back barrier. Significant differences in off-state leakage up...

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Veröffentlicht in:	Applied physics letters 2024-07, Vol.125 (2)
Hauptverfasser:	Liu, Siyu, Zhuang, Yihao, Li, Hanchao, Xie, Qingyun, Wang, Yue, Xie, Hanlin, Ranjan, Kumud, Ng, Geok Ing
Format:	Artikel
Sprache:	eng
Schlagworte:	Aluminum gallium nitrides Aluminum nitride Electric field strength Electrical properties Gallium nitrides High electron mobility transistors Leakage Semiconductor devices Silicon substrates Temperature dependence
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