Exact solutions for thermally induced electromechanical fields of PN junctions in centrosymmetric semiconductors

PN junctions play important roles in semiconductor devices. Flexoelectricity, an electromechanical coupling between strain gradient and electric polarization, has non-negligible contributions in nano-devices. The thermoflexoelectric effect is a phenomenon in which temperature gradients generate inho...

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Veröffentlicht in:	Journal of applied physics 2024-07, Vol.136 (4)
Hauptverfasser:	Wei, Chao, Guo, Ziwen, Tang, Jian, Huang, Wenbin
Format:	Artikel
Sprache:	eng
Schlagworte:	Carrier transport Current carriers Electric fields Electric polarization Electrical junctions Exact solutions Mathematical analysis Nanotechnology devices One dimensional models P-n junctions Potential barriers Semiconductor devices Transport phenomena
Online-Zugang:	Volltext
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