Pinch-off driven near-ideal output characteristics of n-Ga2O3/p-GaN light effect transistor for UV photonics

Gallium oxide (Ga2O3) based phototransistor can be used as a switch and an amplifier in typical digital and analog UV photonic applications, respectively. The light detection capability in Ga2O3 is very high, but these phototransistors suffer from poor drain current saturation with bias. Furthermore...

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Veröffentlicht in:	Applied physics letters 2024-07, Vol.125 (2)
Hauptverfasser:	Mondal, Arnab, Yadav, Manoj K., Nandi, Arpit, Kumar, Shiv, Sanyal, Indraneel, Sharma, Satinder K., Chyi, Jen-Inn, Bag, Ankush
Format:	Artikel
Sprache:	eng
Schlagworte:	Analog circuits Depletion Driver circuits Electric potential Field effect transistors Gallium nitrides Gallium oxides Heterojunctions Integrated circuits Line of sight communication Luminous intensity Optical coupling Photonics Phototransistors Semiconductor devices Transistors Voltage
Online-Zugang:	Volltext
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