Structural and optical properties of epitaxial ScxAl1−xN coherently grown on GaN bulk substrates by sputtering method

Three scandium aluminum nitride (ScAlN) thin films with different Sc compositions of 6%, 10%, and 14% were heteroepitaxially grown on n-type GaN bulk substrates by a low-temperature sputtering method. Atomically flat and smooth surfaces were observed by atomic force microscopy. The ScAlN films were...

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Veröffentlicht in:	Applied physics letters 2024-07, Vol.125 (2)
Hauptverfasser:	Maeda, Takuya, Wakamoto, Yusuke, Kaneki, Shota, Fujikura, Hajime, Kobayashi, Atsushi
Format:	Artikel
Sprache:	eng
Schlagworte:	Composition Doppler effect Epitaxial growth Gallium nitrides Lattice parameters Low temperature Optical properties Red shift Refractivity Scandium Spectroellipsometry Sputtering Substrates Thin films
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