Investigation of cryogenic current–voltage anomalies in SiGe HBTs: Role of base–emitter junction inhomogeneities

The deviations of cryogenic collector current–voltage characteristics of SiGe heterojunction bipolar transistors (HBTs) from ideal drift-diffusion theory have been a topic of investigation for many years. Recent work indicates that direct tunneling across the base contributes to the non-ideal curren...

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Veröffentlicht in:	Journal of applied physics 2024-04, Vol.135 (16)
Hauptverfasser:	Naik, Nachiket R., Gabritchidze, Bekari, Chen, Justin H., Cleary, Kieran A., Kooi, Jacob, Minnich, Austin J.
Format:	Artikel
Sprache:	eng
Schlagworte:	Cryogenic temperature Current voltage characteristics Diffusion theory Electrical junctions Emitters Heterojunction bipolar transistors Inhomogeneity Qualitative analysis Semiconductor devices Silicon germanides Temperature dependence
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