The stability analysis of In–Ga–ZnO thin film transistors with polyimide substrates based on Maxwell–Wagner effect
Flexible organic light-emitting diode display devices fabricated on polyimide (PI) substrates have more obvious residual image problems due to the abnormal threshold-voltage (Vth) shifts of a thin film transistor (TFT). In this paper, the Vth shift of TFT fabricated on a PI substrate was analyzed. W...
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| Veröffentlicht in: | Applied physics letters 2024-04, Vol.124 (16) |
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| container_title | Applied physics letters |
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| creator | Bao, Zongchi Liu, Bin Liu, Xianwen Zhang, Shuo Weng, Le Sun, Haoran Zhang, Xi Yao, Qi Yuan, Guangcai Guo, Jian Ning, Ce Shi, Dawei Wang, Feng Yu, Zhinong |
| description | Flexible organic light-emitting diode display devices fabricated on polyimide (PI) substrates have more obvious residual image problems due to the abnormal threshold-voltage (Vth) shifts of a thin film transistor (TFT). In this paper, the Vth shift of TFT fabricated on a PI substrate was analyzed. We explained the worse bias stability and worse recovery of TFT with a PI substrate compared with TFT with a glass substrate, by an interlayer charging effect (Maxwell–Wagner effect) and a technology computer-aided design (Silvaco). When bias stress was applied for a long time, the interface between the PI substrate and the buffer layer will have a charging effect under the action of an electric field, and the charging charge will react on the channel and hinder the formation of the channel. We found that there are differences in the scale of charge under different voltage stress conditions, and this will result in different Vth shifts of driving TFTs for displays units. |
| doi_str_mv | 10.1063/5.0196413 |
| format | Article |
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In this paper, the Vth shift of TFT fabricated on a PI substrate was analyzed. We explained the worse bias stability and worse recovery of TFT with a PI substrate compared with TFT with a glass substrate, by an interlayer charging effect (Maxwell–Wagner effect) and a technology computer-aided design (Silvaco). When bias stress was applied for a long time, the interface between the PI substrate and the buffer layer will have a charging effect under the action of an electric field, and the charging charge will react on the channel and hinder the formation of the channel. We found that there are differences in the scale of charge under different voltage stress conditions, and this will result in different Vth shifts of driving TFTs for displays units.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/5.0196413</identifier><identifier>CODEN: APPLAB</identifier><language>eng</language><publisher>Melville: American Institute of Physics</publisher><subject>Bias ; Buffer layers ; CAD ; Charging ; Computer aided design ; Display devices ; Electric fields ; Electric potential ; Glass substrates ; Interlayers ; Organic light emitting diodes ; Semiconductor devices ; Stability analysis ; Thin film transistors ; Thin films ; Voltage ; Zinc oxide</subject><ispartof>Applied physics letters, 2024-04, Vol.124 (16)</ispartof><rights>Author(s)</rights><rights>2024 Author(s). Published under an exclusive license by AIP Publishing.</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><cites>FETCH-LOGICAL-c252t-71cb81a628704441163a818d5ff367756f585242027dcc0210e54c1067da3ece3</cites><orcidid>0009-0004-6258-2947 ; 0000-0002-4937-3858 ; 0000-0001-7626-3112 ; 0000-0001-9794-0047 ; 0000-0002-9421-6958</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://pubs.aip.org/apl/article-lookup/doi/10.1063/5.0196413$$EHTML$$P50$$Gscitation$$H</linktohtml><link.rule.ids>315,781,785,795,4513,27929,27930,76389</link.rule.ids></links><search><creatorcontrib>Bao, Zongchi</creatorcontrib><creatorcontrib>Liu, Bin</creatorcontrib><creatorcontrib>Liu, Xianwen</creatorcontrib><creatorcontrib>Zhang, Shuo</creatorcontrib><creatorcontrib>Weng, Le</creatorcontrib><creatorcontrib>Sun, Haoran</creatorcontrib><creatorcontrib>Zhang, Xi</creatorcontrib><creatorcontrib>Yao, Qi</creatorcontrib><creatorcontrib>Yuan, Guangcai</creatorcontrib><creatorcontrib>Guo, Jian</creatorcontrib><creatorcontrib>Ning, Ce</creatorcontrib><creatorcontrib>Shi, Dawei</creatorcontrib><creatorcontrib>Wang, Feng</creatorcontrib><creatorcontrib>Yu, Zhinong</creatorcontrib><title>The stability analysis of In–Ga–ZnO thin film transistors with polyimide substrates based on Maxwell–Wagner effect</title><title>Applied physics letters</title><description>Flexible organic light-emitting diode display devices fabricated on polyimide (PI) substrates have more obvious residual image problems due to the abnormal threshold-voltage (Vth) shifts of a thin film transistor (TFT). In this paper, the Vth shift of TFT fabricated on a PI substrate was analyzed. We explained the worse bias stability and worse recovery of TFT with a PI substrate compared with TFT with a glass substrate, by an interlayer charging effect (Maxwell–Wagner effect) and a technology computer-aided design (Silvaco). When bias stress was applied for a long time, the interface between the PI substrate and the buffer layer will have a charging effect under the action of an electric field, and the charging charge will react on the channel and hinder the formation of the channel. We found that there are differences in the scale of charge under different voltage stress conditions, and this will result in different Vth shifts of driving TFTs for displays units.</description><subject>Bias</subject><subject>Buffer layers</subject><subject>CAD</subject><subject>Charging</subject><subject>Computer aided design</subject><subject>Display devices</subject><subject>Electric fields</subject><subject>Electric potential</subject><subject>Glass substrates</subject><subject>Interlayers</subject><subject>Organic light emitting diodes</subject><subject>Semiconductor devices</subject><subject>Stability analysis</subject><subject>Thin film transistors</subject><subject>Thin films</subject><subject>Voltage</subject><subject>Zinc oxide</subject><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2024</creationdate><recordtype>article</recordtype><recordid>eNp9kM1KAzEURoMoWKsL3yDgSmFqfifTpRSthUo3FcHNkGYSmzJNapLSzs538A19EiPt2s29XL7DB_cAcI3RAKOS3vMBwsOSYXoCehgJUVCMq1PQQwjRohxyfA4uYlzlkxNKe2A_X2oYk1zY1qYOSifbLtoIvYET9_P1PZZ5vLsZTEvroLHtGqYgXUaSDxHubFrCjW87u7ZNLtouYo6TjnAho26gd_BF7ne6bXPNm_xwOkBtjFbpEpwZ2UZ9ddx98Pr0OB89F9PZeDJ6mBaKcJIKgdWiwrIklUCMMYxLKitcNdwYWgrBS8MrThhBRDRKIYKR5kxlFaKRVCtN--Dm0LsJ_nOrY6pXfhvym7GmiFZDQhmjmbo9UCr4GIM29SbYtQxdjVH9J7bm9VFsZu8ObFQ2yWS9-wf-BddjesM</recordid><startdate>20240415</startdate><enddate>20240415</enddate><creator>Bao, Zongchi</creator><creator>Liu, Bin</creator><creator>Liu, Xianwen</creator><creator>Zhang, Shuo</creator><creator>Weng, Le</creator><creator>Sun, Haoran</creator><creator>Zhang, Xi</creator><creator>Yao, Qi</creator><creator>Yuan, Guangcai</creator><creator>Guo, Jian</creator><creator>Ning, Ce</creator><creator>Shi, Dawei</creator><creator>Wang, Feng</creator><creator>Yu, Zhinong</creator><general>American Institute of Physics</general><scope>AAYXX</scope><scope>CITATION</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope><orcidid>https://orcid.org/0009-0004-6258-2947</orcidid><orcidid>https://orcid.org/0000-0002-4937-3858</orcidid><orcidid>https://orcid.org/0000-0001-7626-3112</orcidid><orcidid>https://orcid.org/0000-0001-9794-0047</orcidid><orcidid>https://orcid.org/0000-0002-9421-6958</orcidid></search><sort><creationdate>20240415</creationdate><title>The stability analysis of In–Ga–ZnO thin film transistors with polyimide substrates based on Maxwell–Wagner effect</title><author>Bao, Zongchi ; 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| subjects | Bias Buffer layers CAD Charging Computer aided design Display devices Electric fields Electric potential Glass substrates Interlayers Organic light emitting diodes Semiconductor devices Stability analysis Thin film transistors Thin films Voltage Zinc oxide |
| title | The stability analysis of In–Ga–ZnO thin film transistors with polyimide substrates based on Maxwell–Wagner effect |
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