InGaAs/Si PIN photodetector with low interfacial recombination rates realized by wafer bonding with a polycrystalline Si interlayer

In this Letter, we proposed a robust InGaAs/Si bonded heterojunction by polycrystalline Si (poly-Si) and amorphous interlayers. The ultra-thin amorphous layer is induced through Ar plasma treatment. The synergism of poly-Si and amorphous interlayers effectively blocks the lattice mismatch and releas...

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Veröffentlicht in:Applied physics letters 2024-03, Vol.124 (12)
Hauptverfasser: Jiao, Jinlong, Ji, Ruoyun, Yao, Liqiang, Rao, Yingjie, Ke, Shaoying, Xu, Jianfang, Zeng, Yibo, Li, Cheng, Lin, Guangyang, Huang, Wei, Chen, Songyan
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container_issue 12
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container_title Applied physics letters
container_volume 124
creator Jiao, Jinlong
Ji, Ruoyun
Yao, Liqiang
Rao, Yingjie
Ke, Shaoying
Xu, Jianfang
Zeng, Yibo
Li, Cheng
Lin, Guangyang
Huang, Wei
Chen, Songyan
description In this Letter, we proposed a robust InGaAs/Si bonded heterojunction by polycrystalline Si (poly-Si) and amorphous interlayers. The ultra-thin amorphous layer is induced through Ar plasma treatment. The synergism of poly-Si and amorphous interlayers effectively blocks the lattice mismatch and releases the interfacial thermal stress. A bubble- and defect-free bonding interface is achieved even if after annealing at 500 °C, demonstrating compatibility with high-temperature processes. The heavily doped poly-Si interlayer sweeps the electric field from the poly-Si layer and concentrates in the amorphous layer, rendering electron tunneling through the bonding interface and reducing the interfacial recombination rates. As a result, the bonded InGaAs/Si PIN photodetector harvests a saturated and low dark density of 0.26 mA/cm2 at −1 V and a high rectification ratio of 3.5 × 105 at ±1 V. Additionally, the non-optimized device achieves a high responsivity of 0.82 A/W at 1550 nm. These results indicate that the proposed bonding strategy provides a viable route to tackle the electronic, optical, and thermal barriers of integrating single-crystal InGaAs into Si platforms. This enables the photodetection of InGaAs/Si devices with a high signal-to-noise ratio.
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The ultra-thin amorphous layer is induced through Ar plasma treatment. The synergism of poly-Si and amorphous interlayers effectively blocks the lattice mismatch and releases the interfacial thermal stress. A bubble- and defect-free bonding interface is achieved even if after annealing at 500 °C, demonstrating compatibility with high-temperature processes. The heavily doped poly-Si interlayer sweeps the electric field from the poly-Si layer and concentrates in the amorphous layer, rendering electron tunneling through the bonding interface and reducing the interfacial recombination rates. As a result, the bonded InGaAs/Si PIN photodetector harvests a saturated and low dark density of 0.26 mA/cm2 at −1 V and a high rectification ratio of 3.5 × 105 at ±1 V. Additionally, the non-optimized device achieves a high responsivity of 0.82 A/W at 1550 nm. 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subjects Argon plasma
Bonding
Crystal defects
Defect annealing
Electric fields
Electron tunneling
Heterojunctions
High temperature
Indium gallium arsenides
Interlayers
Photometers
Polycrystals
Polysilicon
Signal to noise ratio
Single crystals
Thermal stress
title InGaAs/Si PIN photodetector with low interfacial recombination rates realized by wafer bonding with a polycrystalline Si interlayer
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