Epitaxial growth and characterization of multi-layer site-controlled InGaAs quantum dots based on the buried stressor method

We report on the epitaxial growth, theoretical modeling, and structural as well as optical investigation of multi-layer, site-controlled quantum dots fabricated using the buried stressor method. This deterministic growth technique utilizes the strain from a partially oxidized AlAs layer to induce si...

Ausführliche Beschreibung

Bibliographische Detailangaben

Veröffentlicht in:	Applied physics letters 2024-02, Vol.124 (6)
Hauptverfasser:	Limame, Imad, Shih, Ching-Wen, Koltchanov, Alexej, Heisinger, Fabian, Nippert, Felix, Plattner, Moritz, Schall, Johannes, Wagner, Markus R., Rodt, Sven, Klenovsky, Petr, Reitzenstein, Stephan
Format:	Artikel
Sprache:	eng
Schlagworte:	Emitters Epitaxial growth Indium gallium arsenides Microlasers Multilayers Nanoengineering Nucleation Quantum dots Spectral control Spectral emittance Strain
Online-Zugang:	Volltext
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!