Growth, catalysis, and faceting of α-Ga2O3 and α-(InxGa1−x)2O3 on m-plane α-Al2O3 by molecular beam epitaxy

The growth of α-Ga2O3 and α-(InxGa1−x)2O3 on m-plane α-Al2O3(101̄0) by molecular beam epitaxy (MBE) and metal-oxide-catalyzed epitaxy (MOCATAXY) is investigated. By systematically exploring the parameter space accessed by MBE and MOCATAXY, phase-pure α-Ga2O3(101̄0) and α-(InxGa1−x)2O3(101̄0) thin fi...

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Veröffentlicht in:	APL materials 2024-01, Vol.12 (1), p.011120-011120-10
Hauptverfasser:	Williams, Martin S., Alonso-Orts, Manuel, Schowalter, Marco, Karg, Alexander, Raghuvansy, Sushma, McCandless, Jon P., Jena, Debdeep, Rosenauer, Andreas, Eickhoff, Martin, Vogt, Patrick
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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