Topological Mott transistor with high current density based on hydrogen-terminated diamond

The mechanism for the high drain-source current density, IDS ≈ 1.3 A/mm, measured in a field effect transistor based on hydrogen-terminated diamond, is explained by the Mott insulator-metal transition (IMT). A local metal phase satisfying the Mott criterion for an IMT occurs in a p-type semiconducto...

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Veröffentlicht in:	Applied physics letters 2023-12, Vol.123 (26)
Hauptverfasser:	Kim, Hyun-Tak, Qazilbash, M. M.
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied physics Carrier density Current carriers Current density Diamonds Field effect transistors Hydrogen P-type semiconductors Power semiconductor devices Topology
Online-Zugang:	Volltext
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