Effect of Zn doping in CuO optical and gas sensing properties
In this research, monoclinic copper oxide (cuo) films dopped with zinc were deposited by DC magnetron sputtering method. These films were studied as gas sensors for NO2 gas. The best sensitivity to gas was found to sample (D) at a temperature of (200C), which led to semi-The P-type conductor with an...
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| creator | Mahdi, Montaser Ahmad Khadayeir, Abdulhussain A. Kareem, Q. S. Shaheed, Mohamed A. |
| description | In this research, monoclinic copper oxide (cuo) films dopped with zinc were deposited by DC magnetron sputtering method. These films were studied as gas sensors for NO2 gas. The best sensitivity to gas was found to sample (D) at a temperature of (200C), which led to semi-The P-type conductor with an n-type semiconductor leads to an increase in the sensitivity of the gas sensor to the target gas by decreasing the resistance of the sensor and thus increasing its sensitivity. In the optical tests, the optical energy gap of the prepared films was calculated and found to be equal to (Eg=3.03, 2.99, 2.97, 2.93, 2.89, 2.85eV) It was also found that the optical energy gap directly by calculating the absorption coefficient, as well as the latency coefficient and refractive index of the prepared films |
| doi_str_mv | 10.1063/5.0157326 |
| format | Conference Proceeding |
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S. ; Shaheed, Mohamed A.</creator><contributor>Obaid, Ahmed J. ; Alkhafaji, Mohammed Ayad</contributor><creatorcontrib>Mahdi, Montaser Ahmad ; Khadayeir, Abdulhussain A. ; Kareem, Q. S. ; Shaheed, Mohamed A. ; Obaid, Ahmed J. ; Alkhafaji, Mohammed Ayad</creatorcontrib><description>In this research, monoclinic copper oxide (cuo) films dopped with zinc were deposited by DC magnetron sputtering method. These films were studied as gas sensors for NO2 gas. The best sensitivity to gas was found to sample (D) at a temperature of (200C), which led to semi-The P-type conductor with an n-type semiconductor leads to an increase in the sensitivity of the gas sensor to the target gas by decreasing the resistance of the sensor and thus increasing its sensitivity. In the optical tests, the optical energy gap of the prepared films was calculated and found to be equal to (Eg=3.03, 2.99, 2.97, 2.93, 2.89, 2.85eV) It was also found that the optical energy gap directly by calculating the absorption coefficient, as well as the latency coefficient and refractive index of the prepared films</description><identifier>ISSN: 0094-243X</identifier><identifier>EISSN: 1551-7616</identifier><identifier>DOI: 10.1063/5.0157326</identifier><identifier>CODEN: APCPCS</identifier><language>eng</language><publisher>Melville: American Institute of Physics</publisher><subject>Absorptivity ; Copper oxides ; Energy gap ; Gas sensors ; Magnetron sputtering ; Mathematical analysis ; N-type semiconductors ; Nitrogen dioxide ; Optical properties ; Refractivity ; Sensitivity</subject><ispartof>AIP conference proceedings, 2023, Vol.2845 (1)</ispartof><rights>AIP Publishing LLC</rights><rights>2023 AIP Publishing LLC.</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://pubs.aip.org/acp/article-lookup/doi/10.1063/5.0157326$$EHTML$$P50$$Gscitation$$H</linktohtml><link.rule.ids>309,310,314,776,780,785,786,790,4497,23910,23911,25119,27903,27904,76131</link.rule.ids></links><search><contributor>Obaid, Ahmed J.</contributor><contributor>Alkhafaji, Mohammed Ayad</contributor><creatorcontrib>Mahdi, Montaser Ahmad</creatorcontrib><creatorcontrib>Khadayeir, Abdulhussain A.</creatorcontrib><creatorcontrib>Kareem, Q. S.</creatorcontrib><creatorcontrib>Shaheed, Mohamed A.</creatorcontrib><title>Effect of Zn doping in CuO optical and gas sensing properties</title><title>AIP conference proceedings</title><description>In this research, monoclinic copper oxide (cuo) films dopped with zinc were deposited by DC magnetron sputtering method. These films were studied as gas sensors for NO2 gas. The best sensitivity to gas was found to sample (D) at a temperature of (200C), which led to semi-The P-type conductor with an n-type semiconductor leads to an increase in the sensitivity of the gas sensor to the target gas by decreasing the resistance of the sensor and thus increasing its sensitivity. In the optical tests, the optical energy gap of the prepared films was calculated and found to be equal to (Eg=3.03, 2.99, 2.97, 2.93, 2.89, 2.85eV) It was also found that the optical energy gap directly by calculating the absorption coefficient, as well as the latency coefficient and refractive index of the prepared films</description><subject>Absorptivity</subject><subject>Copper oxides</subject><subject>Energy gap</subject><subject>Gas sensors</subject><subject>Magnetron sputtering</subject><subject>Mathematical analysis</subject><subject>N-type semiconductors</subject><subject>Nitrogen dioxide</subject><subject>Optical properties</subject><subject>Refractivity</subject><subject>Sensitivity</subject><issn>0094-243X</issn><issn>1551-7616</issn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2023</creationdate><recordtype>conference_proceeding</recordtype><recordid>eNotkE1LAzEYhIMouFYP_oOAN2Fr3nw2Bw-ytCoUeulBvIR3N9mSUrPrZnvw37ulZQ5zmIcZGEIegc2BafGi5gyUEVxfkQKUgtJo0NekYMzKkkvxdUvuct4zxq0xi4K8Lts2NCPtWvqdqO_6mHY0JlodN7Trx9jggWLydIeZ5pDyKe6Hrg_DGEO-JzctHnJ4uPiMbFfLbfVRrjfvn9XbuuythtKCr00QXGDjW95KGxBlYLhQtrbMBKlt4ycZUOCRG6ylrIEDeqGVNUrMyNO5dlr-PYY8un13HNK06PhCS6GEADlRz2cqN3HEMXbJ9UP8weHPAXOnd5xyl3fEP5hsVWw</recordid><startdate>20230913</startdate><enddate>20230913</enddate><creator>Mahdi, Montaser Ahmad</creator><creator>Khadayeir, Abdulhussain A.</creator><creator>Kareem, Q. 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S. ; Shaheed, Mohamed A.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-p961-91db7e323acdf2f49eaa4e0a859b907e469cdcdc7151da27ab44b121ad3659753</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2023</creationdate><topic>Absorptivity</topic><topic>Copper oxides</topic><topic>Energy gap</topic><topic>Gas sensors</topic><topic>Magnetron sputtering</topic><topic>Mathematical analysis</topic><topic>N-type semiconductors</topic><topic>Nitrogen dioxide</topic><topic>Optical properties</topic><topic>Refractivity</topic><topic>Sensitivity</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Mahdi, Montaser Ahmad</creatorcontrib><creatorcontrib>Khadayeir, Abdulhussain A.</creatorcontrib><creatorcontrib>Kareem, Q. S.</creatorcontrib><creatorcontrib>Shaheed, Mohamed A.</creatorcontrib><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Mahdi, Montaser Ahmad</au><au>Khadayeir, Abdulhussain A.</au><au>Kareem, Q. S.</au><au>Shaheed, Mohamed A.</au><au>Obaid, Ahmed J.</au><au>Alkhafaji, Mohammed Ayad</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>Effect of Zn doping in CuO optical and gas sensing properties</atitle><btitle>AIP conference proceedings</btitle><date>2023-09-13</date><risdate>2023</risdate><volume>2845</volume><issue>1</issue><issn>0094-243X</issn><eissn>1551-7616</eissn><coden>APCPCS</coden><abstract>In this research, monoclinic copper oxide (cuo) films dopped with zinc were deposited by DC magnetron sputtering method. These films were studied as gas sensors for NO2 gas. The best sensitivity to gas was found to sample (D) at a temperature of (200C), which led to semi-The P-type conductor with an n-type semiconductor leads to an increase in the sensitivity of the gas sensor to the target gas by decreasing the resistance of the sensor and thus increasing its sensitivity. In the optical tests, the optical energy gap of the prepared films was calculated and found to be equal to (Eg=3.03, 2.99, 2.97, 2.93, 2.89, 2.85eV) It was also found that the optical energy gap directly by calculating the absorption coefficient, as well as the latency coefficient and refractive index of the prepared films</abstract><cop>Melville</cop><pub>American Institute of Physics</pub><doi>10.1063/5.0157326</doi><tpages>9</tpages></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0094-243X |
| ispartof | AIP conference proceedings, 2023, Vol.2845 (1) |
| issn | 0094-243X 1551-7616 |
| language | eng |
| recordid | cdi_scitation_primary_10_1063_5_0157326 |
| source | AIP Journals Complete |
| subjects | Absorptivity Copper oxides Energy gap Gas sensors Magnetron sputtering Mathematical analysis N-type semiconductors Nitrogen dioxide Optical properties Refractivity Sensitivity |
| title | Effect of Zn doping in CuO optical and gas sensing properties |
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