Thermal stability study of gallium nitride based magnetic field sensor
We investigated the thermal stability and performance of AlGaN/AlN/GaN Hall-effect sensors under industry-relevant atmospheric conditions. The thermal stability and performance of Hall sensors are evaluated by monitoring Hall sensitivity, two-dimensional electron gas density, and Ohmic contact resis...
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creator | Shetty, Satish Kuchuk, Andrian Zamani-Alavijeh, Mohammad Hassan, Ayesha Eisner, Savannah R. Maia de Oliveira, Fernando Krone, Alexis Harris, John Thompson, Josh P. Eldose, Nirosh M. Mazur, Yuriy I. Huitink, David Senesky, Debbie G. Alan Mantooth, H. Salamo, Gregory J. |
description | We investigated the thermal stability and performance of AlGaN/AlN/GaN Hall-effect sensors under industry-relevant atmospheric conditions. The thermal stability and performance of Hall sensors are evaluated by monitoring Hall sensitivity, two-dimensional electron gas density, and Ohmic contact resistance during aging at 200 °C for up to 2800 h under atmospheric conditions. This was accomplished by characterizing AlGaN/AlN/GaN micro-Hall sensors, with and without contacts, and before and after being placed under different thermal aging times. Observed electrical performance was correlated with the micro-structural evolution of AlGaN/AlN/GaN Hall sensor heterostructures. Results indicate that the AlGaN/AlN/GaN Hall sensor provides stable performance for as long as 2800 h aging at 200 °C without any significant degradation of (i) Hall sensitivity, (ii) two-dimensional electron gas, and (iii) Ohmic contacts. However, there was a small change in sheet density and mobility, which is due to a decrease in polarization, resulting from local inhomogeneous strain relief at the barrier layer. During the early stage of thermal aging, a decrease in contact resistance was also observed and attributed to (i) out-diffusion of “Ga” at the vicinity of the contact interface, and (ii) a reduction in oxygen concentration and formation of Al–Ti intermediate alloy at the GaN/Ti interface, resulting in a reduced barrier and enhanced electron transport at the contacts. However, despite these small changes, results indicate that the AlGaN/AlN/GaN Hall sensor provides stable performance for as long as 2800 h thermal aging at 200 °C. |
doi_str_mv | 10.1063/5.0156013 |
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The thermal stability and performance of Hall sensors are evaluated by monitoring Hall sensitivity, two-dimensional electron gas density, and Ohmic contact resistance during aging at 200 °C for up to 2800 h under atmospheric conditions. This was accomplished by characterizing AlGaN/AlN/GaN micro-Hall sensors, with and without contacts, and before and after being placed under different thermal aging times. Observed electrical performance was correlated with the micro-structural evolution of AlGaN/AlN/GaN Hall sensor heterostructures. Results indicate that the AlGaN/AlN/GaN Hall sensor provides stable performance for as long as 2800 h aging at 200 °C without any significant degradation of (i) Hall sensitivity, (ii) two-dimensional electron gas, and (iii) Ohmic contacts. However, there was a small change in sheet density and mobility, which is due to a decrease in polarization, resulting from local inhomogeneous strain relief at the barrier layer. During the early stage of thermal aging, a decrease in contact resistance was also observed and attributed to (i) out-diffusion of “Ga” at the vicinity of the contact interface, and (ii) a reduction in oxygen concentration and formation of Al–Ti intermediate alloy at the GaN/Ti interface, resulting in a reduced barrier and enhanced electron transport at the contacts. However, despite these small changes, results indicate that the AlGaN/AlN/GaN Hall sensor provides stable performance for as long as 2800 h thermal aging at 200 °C.</description><identifier>ISSN: 0021-8979</identifier><identifier>EISSN: 1089-7550</identifier><identifier>DOI: 10.1063/5.0156013</identifier><identifier>CODEN: JAPIAU</identifier><language>eng</language><publisher>Melville: American Institute of Physics</publisher><subject>Aging ; Aluminum gallium nitrides ; Aluminum nitride ; Applied physics ; Barrier layers ; Contact resistance ; Electric contacts ; Electron gas ; Electron transport ; Gallium nitrides ; Gas density ; Hall effect ; Heterostructures ; Sensors ; Stability analysis ; Thermal stability</subject><ispartof>Journal of applied physics, 2023-10, Vol.134 (14)</ispartof><rights>Author(s)</rights><rights>2023 Author(s). Published under an exclusive license by AIP Publishing.</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c327t-7c7c5b9793f050b0ef401a9be9d0b02044284dd5570011583d20971ed394774a3</citedby><cites>FETCH-LOGICAL-c327t-7c7c5b9793f050b0ef401a9be9d0b02044284dd5570011583d20971ed394774a3</cites><orcidid>0009-0003-8933-9448 ; 0000-0002-0884-6049 ; 0000-0002-5962-784X ; 0000-0003-2423-2597 ; 0000-0003-4272-5416 ; 0009-0006-3073-3709 ; 0000-0002-0571-6169 ; 0000-0001-6447-5345 ; 0000-0002-3742-2499 ; 0009-0007-8788-3617 ; 0009-0001-6088-099X ; 0000-0003-3349-2251</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://pubs.aip.org/jap/article-lookup/doi/10.1063/5.0156013$$EHTML$$P50$$Gscitation$$H</linktohtml><link.rule.ids>314,780,784,794,4512,27924,27925,76384</link.rule.ids></links><search><creatorcontrib>Shetty, Satish</creatorcontrib><creatorcontrib>Kuchuk, Andrian</creatorcontrib><creatorcontrib>Zamani-Alavijeh, Mohammad</creatorcontrib><creatorcontrib>Hassan, Ayesha</creatorcontrib><creatorcontrib>Eisner, Savannah R.</creatorcontrib><creatorcontrib>Maia de Oliveira, Fernando</creatorcontrib><creatorcontrib>Krone, Alexis</creatorcontrib><creatorcontrib>Harris, John</creatorcontrib><creatorcontrib>Thompson, Josh P.</creatorcontrib><creatorcontrib>Eldose, Nirosh M.</creatorcontrib><creatorcontrib>Mazur, Yuriy I.</creatorcontrib><creatorcontrib>Huitink, David</creatorcontrib><creatorcontrib>Senesky, Debbie G.</creatorcontrib><creatorcontrib>Alan Mantooth, H.</creatorcontrib><creatorcontrib>Salamo, Gregory J.</creatorcontrib><title>Thermal stability study of gallium nitride based magnetic field sensor</title><title>Journal of applied physics</title><description>We investigated the thermal stability and performance of AlGaN/AlN/GaN Hall-effect sensors under industry-relevant atmospheric conditions. The thermal stability and performance of Hall sensors are evaluated by monitoring Hall sensitivity, two-dimensional electron gas density, and Ohmic contact resistance during aging at 200 °C for up to 2800 h under atmospheric conditions. This was accomplished by characterizing AlGaN/AlN/GaN micro-Hall sensors, with and without contacts, and before and after being placed under different thermal aging times. Observed electrical performance was correlated with the micro-structural evolution of AlGaN/AlN/GaN Hall sensor heterostructures. Results indicate that the AlGaN/AlN/GaN Hall sensor provides stable performance for as long as 2800 h aging at 200 °C without any significant degradation of (i) Hall sensitivity, (ii) two-dimensional electron gas, and (iii) Ohmic contacts. However, there was a small change in sheet density and mobility, which is due to a decrease in polarization, resulting from local inhomogeneous strain relief at the barrier layer. During the early stage of thermal aging, a decrease in contact resistance was also observed and attributed to (i) out-diffusion of “Ga” at the vicinity of the contact interface, and (ii) a reduction in oxygen concentration and formation of Al–Ti intermediate alloy at the GaN/Ti interface, resulting in a reduced barrier and enhanced electron transport at the contacts. However, despite these small changes, results indicate that the AlGaN/AlN/GaN Hall sensor provides stable performance for as long as 2800 h thermal aging at 200 °C.</description><subject>Aging</subject><subject>Aluminum gallium nitrides</subject><subject>Aluminum nitride</subject><subject>Applied physics</subject><subject>Barrier layers</subject><subject>Contact resistance</subject><subject>Electric contacts</subject><subject>Electron gas</subject><subject>Electron transport</subject><subject>Gallium nitrides</subject><subject>Gas density</subject><subject>Hall effect</subject><subject>Heterostructures</subject><subject>Sensors</subject><subject>Stability analysis</subject><subject>Thermal stability</subject><issn>0021-8979</issn><issn>1089-7550</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2023</creationdate><recordtype>article</recordtype><recordid>eNp9kEtLAzEUhYMoWKsL_0HAlcLUm1czWUqxKhTc1HXITDI1ZR41ySzm35vSrru658LHPecehB4JLAgs2atYABFLIOwKzQiUqpBCwDWaAVBSlEqqW3QX4x6AkJKpGVpvf13oTItjMpVvfZqyGu2EhwbvTNv6scO9T8FbhysTncWd2fUu-Ro33rUWR9fHIdyjm8a00T2c5xz9rN-3q89i8_3xtXrbFDWjMhWylrWocgrWgIAKXMOBGFU5ZfNGgXNacmuFkMeAomSWgpLEWaa4lNywOXo63T2E4W90Men9MIY-W2pa5lcV55Jm6vlE1WGIMbhGH4LvTJg0AX2sSQt9rimzLyc21j6Z5If-AvwPHrBlbQ</recordid><startdate>20231014</startdate><enddate>20231014</enddate><creator>Shetty, Satish</creator><creator>Kuchuk, Andrian</creator><creator>Zamani-Alavijeh, Mohammad</creator><creator>Hassan, Ayesha</creator><creator>Eisner, Savannah R.</creator><creator>Maia de Oliveira, Fernando</creator><creator>Krone, Alexis</creator><creator>Harris, John</creator><creator>Thompson, Josh P.</creator><creator>Eldose, Nirosh M.</creator><creator>Mazur, Yuriy I.</creator><creator>Huitink, David</creator><creator>Senesky, Debbie G.</creator><creator>Alan Mantooth, H.</creator><creator>Salamo, Gregory J.</creator><general>American Institute of Physics</general><scope>AAYXX</scope><scope>CITATION</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope><orcidid>https://orcid.org/0009-0003-8933-9448</orcidid><orcidid>https://orcid.org/0000-0002-0884-6049</orcidid><orcidid>https://orcid.org/0000-0002-5962-784X</orcidid><orcidid>https://orcid.org/0000-0003-2423-2597</orcidid><orcidid>https://orcid.org/0000-0003-4272-5416</orcidid><orcidid>https://orcid.org/0009-0006-3073-3709</orcidid><orcidid>https://orcid.org/0000-0002-0571-6169</orcidid><orcidid>https://orcid.org/0000-0001-6447-5345</orcidid><orcidid>https://orcid.org/0000-0002-3742-2499</orcidid><orcidid>https://orcid.org/0009-0007-8788-3617</orcidid><orcidid>https://orcid.org/0009-0001-6088-099X</orcidid><orcidid>https://orcid.org/0000-0003-3349-2251</orcidid></search><sort><creationdate>20231014</creationdate><title>Thermal stability study of gallium nitride based magnetic field sensor</title><author>Shetty, Satish ; Kuchuk, Andrian ; Zamani-Alavijeh, Mohammad ; Hassan, Ayesha ; Eisner, Savannah R. ; Maia de Oliveira, Fernando ; Krone, Alexis ; Harris, John ; Thompson, Josh P. ; Eldose, Nirosh M. ; Mazur, Yuriy I. ; Huitink, David ; Senesky, Debbie G. ; Alan Mantooth, H. ; Salamo, Gregory J.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c327t-7c7c5b9793f050b0ef401a9be9d0b02044284dd5570011583d20971ed394774a3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2023</creationdate><topic>Aging</topic><topic>Aluminum gallium nitrides</topic><topic>Aluminum nitride</topic><topic>Applied physics</topic><topic>Barrier layers</topic><topic>Contact resistance</topic><topic>Electric contacts</topic><topic>Electron gas</topic><topic>Electron transport</topic><topic>Gallium nitrides</topic><topic>Gas density</topic><topic>Hall effect</topic><topic>Heterostructures</topic><topic>Sensors</topic><topic>Stability analysis</topic><topic>Thermal stability</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Shetty, Satish</creatorcontrib><creatorcontrib>Kuchuk, Andrian</creatorcontrib><creatorcontrib>Zamani-Alavijeh, Mohammad</creatorcontrib><creatorcontrib>Hassan, Ayesha</creatorcontrib><creatorcontrib>Eisner, Savannah R.</creatorcontrib><creatorcontrib>Maia de Oliveira, Fernando</creatorcontrib><creatorcontrib>Krone, Alexis</creatorcontrib><creatorcontrib>Harris, John</creatorcontrib><creatorcontrib>Thompson, Josh P.</creatorcontrib><creatorcontrib>Eldose, Nirosh M.</creatorcontrib><creatorcontrib>Mazur, Yuriy I.</creatorcontrib><creatorcontrib>Huitink, David</creatorcontrib><creatorcontrib>Senesky, Debbie G.</creatorcontrib><creatorcontrib>Alan Mantooth, H.</creatorcontrib><creatorcontrib>Salamo, Gregory J.</creatorcontrib><collection>CrossRef</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Journal of applied physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Shetty, Satish</au><au>Kuchuk, Andrian</au><au>Zamani-Alavijeh, Mohammad</au><au>Hassan, Ayesha</au><au>Eisner, Savannah R.</au><au>Maia de Oliveira, Fernando</au><au>Krone, Alexis</au><au>Harris, John</au><au>Thompson, Josh P.</au><au>Eldose, Nirosh M.</au><au>Mazur, Yuriy I.</au><au>Huitink, David</au><au>Senesky, Debbie G.</au><au>Alan Mantooth, H.</au><au>Salamo, Gregory J.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Thermal stability study of gallium nitride based magnetic field sensor</atitle><jtitle>Journal of applied physics</jtitle><date>2023-10-14</date><risdate>2023</risdate><volume>134</volume><issue>14</issue><issn>0021-8979</issn><eissn>1089-7550</eissn><coden>JAPIAU</coden><abstract>We investigated the thermal stability and performance of AlGaN/AlN/GaN Hall-effect sensors under industry-relevant atmospheric conditions. The thermal stability and performance of Hall sensors are evaluated by monitoring Hall sensitivity, two-dimensional electron gas density, and Ohmic contact resistance during aging at 200 °C for up to 2800 h under atmospheric conditions. This was accomplished by characterizing AlGaN/AlN/GaN micro-Hall sensors, with and without contacts, and before and after being placed under different thermal aging times. Observed electrical performance was correlated with the micro-structural evolution of AlGaN/AlN/GaN Hall sensor heterostructures. Results indicate that the AlGaN/AlN/GaN Hall sensor provides stable performance for as long as 2800 h aging at 200 °C without any significant degradation of (i) Hall sensitivity, (ii) two-dimensional electron gas, and (iii) Ohmic contacts. However, there was a small change in sheet density and mobility, which is due to a decrease in polarization, resulting from local inhomogeneous strain relief at the barrier layer. During the early stage of thermal aging, a decrease in contact resistance was also observed and attributed to (i) out-diffusion of “Ga” at the vicinity of the contact interface, and (ii) a reduction in oxygen concentration and formation of Al–Ti intermediate alloy at the GaN/Ti interface, resulting in a reduced barrier and enhanced electron transport at the contacts. However, despite these small changes, results indicate that the AlGaN/AlN/GaN Hall sensor provides stable performance for as long as 2800 h thermal aging at 200 °C.</abstract><cop>Melville</cop><pub>American Institute of Physics</pub><doi>10.1063/5.0156013</doi><tpages>9</tpages><orcidid>https://orcid.org/0009-0003-8933-9448</orcidid><orcidid>https://orcid.org/0000-0002-0884-6049</orcidid><orcidid>https://orcid.org/0000-0002-5962-784X</orcidid><orcidid>https://orcid.org/0000-0003-2423-2597</orcidid><orcidid>https://orcid.org/0000-0003-4272-5416</orcidid><orcidid>https://orcid.org/0009-0006-3073-3709</orcidid><orcidid>https://orcid.org/0000-0002-0571-6169</orcidid><orcidid>https://orcid.org/0000-0001-6447-5345</orcidid><orcidid>https://orcid.org/0000-0002-3742-2499</orcidid><orcidid>https://orcid.org/0009-0007-8788-3617</orcidid><orcidid>https://orcid.org/0009-0001-6088-099X</orcidid><orcidid>https://orcid.org/0000-0003-3349-2251</orcidid><oa>free_for_read</oa></addata></record> |
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subjects | Aging Aluminum gallium nitrides Aluminum nitride Applied physics Barrier layers Contact resistance Electric contacts Electron gas Electron transport Gallium nitrides Gas density Hall effect Heterostructures Sensors Stability analysis Thermal stability |
title | Thermal stability study of gallium nitride based magnetic field sensor |
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