Theory of slow traps and random telegraph signals in ultra-small planar MOSFETs

It is shown that ultra-small MOSFETs with heavily doped substrates contain a significant concentration of slow traps in their space-charge regions. Such a trap arises due to random doping fluctuations and is created if a few shallow impurities form a small-scale cluster, resulting in a high binding...

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Veröffentlicht in:	AIP advances 2023-03, Vol.13 (3), p.035029-035029-21
1. Verfasser:	Fuks, B. I.
Format:	Artikel
Sprache:	eng
Schlagworte:	Amplitudes Doping MOSFETs Qualitative analysis Silicon Substrates
Online-Zugang:	Volltext
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