High-mobility electron gas in Sr2TiO4/SrTiO3 heterostructure engineered by vertical Ruddlesden–Popper faults

High-mobility electron gases in SrTiO3-based heterostructures have been mainly synthesized on single TiO2 terminated SrTiO3 substrates. Here, we show a high-mobility electron gas observed in a Sr2TiO4/SrTiO3 heterostructure based on an untreated SrTiO3 substrate with mixed termination, showing the m...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Veröffentlicht in:	Applied physics letters 2022-12, Vol.121 (24)
Hauptverfasser:	Zhang, T. T., Li, J. Y., Yang, J. F., Gao, T. Y., Sun, H. Y., Gu, Z. B., Deng, Y., Nie, Y. F.
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied physics Electron gas Heterostructures High temperature Oxygen atoms Strontium titanates Substrates Titanium dioxide
Online-Zugang:	Volltext
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

container_end_page
container_issue	24
container_start_page
container_title	Applied physics letters
container_volume	121
creator	Zhang, T. T. Li, J. Y. Yang, J. F. Gao, T. Y. Sun, H. Y. Gu, Z. B. Deng, Y. Nie, Y. F.
description	High-mobility electron gases in SrTiO3-based heterostructures have been mainly synthesized on single TiO2 terminated SrTiO3 substrates. Here, we show a high-mobility electron gas observed in a Sr2TiO4/SrTiO3 heterostructure based on an untreated SrTiO3 substrate with mixed termination, showing the mobility value up to 28 000 cm2 V−1 s−1 at 2 K. SrO–SrO vertical Ruddlesden–Popper faults in the Sr2TiO4 film provide escape channels for oxygen atoms under high temperatures, enabling the as-grown tuning of oxygen vacancies in the SrTiO3 layer during film deposition and reversible after-growth modulation in a thermal annealing process.
doi_str_mv	10.1063/5.0130069
format	Article
fullrecord	<record><control><sourceid>proquest_scita</sourceid><recordid>TN_cdi_scitation_primary_10_1063_5_0130069</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>2754619258</sourcerecordid><originalsourceid>FETCH-LOGICAL-c287t-719633b21d0e6b45a40e6abee0ec83845d3b7b048fc5e9bb102982ea126d91743</originalsourceid><addsrcrecordid>eNp90MtKAzEUBuAgCtbqwjcIuFKYNpfJXJZS1AqFiq3rIZmcaVOmkzHJFLrzHXxDn8SRii4EVz8HPv7DOQhdUjKiJOFjMSKUE5LkR2hASZpGnNLsGA0IITxKckFP0Zn3m34UjPMBaqZmtY62VpnahD2GGsrgbINX0mPT4IVjSzOPxwvXB8drCOCsD64rQ-cAQ7MyDYADjdUe78AFU8oaP3da1-A1NB9v70-2bcHhSnZ18OfopJK1h4vvHKKX-7vlZBrN5g-Pk9tZVLIsDVFK84RzxagmkKhYyLhPqQAIlBnPYqG5ShWJs6oUkCtFCcszBpKyROc0jfkQXR16W2dfO_Ch2NjONf3KgqUiTmjORNar64Mq-6O8g6pondlKty8oKb7eWYji-529vTlYX5ogg7HND95Z9wuLVlf_4b_Nn5z6hK0</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>2754619258</pqid></control><display><type>article</type><title>High-mobility electron gas in Sr2TiO4/SrTiO3 heterostructure engineered by vertical Ruddlesden–Popper faults</title><source>AIP Journals Complete</source><source>Alma/SFX Local Collection</source><creator>Zhang, T. T. ; Li, J. Y. ; Yang, J. F. ; Gao, T. Y. ; Sun, H. Y. ; Gu, Z. B. ; Deng, Y. ; Nie, Y. F.</creator><creatorcontrib>Zhang, T. T. ; Li, J. Y. ; Yang, J. F. ; Gao, T. Y. ; Sun, H. Y. ; Gu, Z. B. ; Deng, Y. ; Nie, Y. F.</creatorcontrib><description>High-mobility electron gases in SrTiO3-based heterostructures have been mainly synthesized on single TiO2 terminated SrTiO3 substrates. Here, we show a high-mobility electron gas observed in a Sr2TiO4/SrTiO3 heterostructure based on an untreated SrTiO3 substrate with mixed termination, showing the mobility value up to 28 000 cm2 V−1 s−1 at 2 K. SrO–SrO vertical Ruddlesden–Popper faults in the Sr2TiO4 film provide escape channels for oxygen atoms under high temperatures, enabling the as-grown tuning of oxygen vacancies in the SrTiO3 layer during film deposition and reversible after-growth modulation in a thermal annealing process.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/5.0130069</identifier><identifier>CODEN: APPLAB</identifier><language>eng</language><publisher>Melville: American Institute of Physics</publisher><subject>Applied physics ; Electron gas ; Heterostructures ; High temperature ; Oxygen atoms ; Strontium titanates ; Substrates ; Titanium dioxide</subject><ispartof>Applied physics letters, 2022-12, Vol.121 (24)</ispartof><rights>Author(s)</rights><rights>2022 Author(s). Published under an exclusive license by AIP Publishing.</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><cites>FETCH-LOGICAL-c287t-719633b21d0e6b45a40e6abee0ec83845d3b7b048fc5e9bb102982ea126d91743</cites><orcidid>0000-0003-0304-3148 ; 0000-0001-9998-1838 ; 0000-0002-8041-8049 ; 0000-0002-0742-6042 ; 0000-0003-0107-7432 ; 0000-0002-5603-2859 ; 0000-0002-9948-9904</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://pubs.aip.org/apl/article-lookup/doi/10.1063/5.0130069$$EHTML$$P50$$Gscitation$$H</linktohtml><link.rule.ids>315,781,785,795,4513,27929,27930,76389</link.rule.ids></links><search><creatorcontrib>Zhang, T. T.</creatorcontrib><creatorcontrib>Li, J. Y.</creatorcontrib><creatorcontrib>Yang, J. F.</creatorcontrib><creatorcontrib>Gao, T. Y.</creatorcontrib><creatorcontrib>Sun, H. Y.</creatorcontrib><creatorcontrib>Gu, Z. B.</creatorcontrib><creatorcontrib>Deng, Y.</creatorcontrib><creatorcontrib>Nie, Y. F.</creatorcontrib><title>High-mobility electron gas in Sr2TiO4/SrTiO3 heterostructure engineered by vertical Ruddlesden–Popper faults</title><title>Applied physics letters</title><description>High-mobility electron gases in SrTiO3-based heterostructures have been mainly synthesized on single TiO2 terminated SrTiO3 substrates. Here, we show a high-mobility electron gas observed in a Sr2TiO4/SrTiO3 heterostructure based on an untreated SrTiO3 substrate with mixed termination, showing the mobility value up to 28 000 cm2 V−1 s−1 at 2 K. SrO–SrO vertical Ruddlesden–Popper faults in the Sr2TiO4 film provide escape channels for oxygen atoms under high temperatures, enabling the as-grown tuning of oxygen vacancies in the SrTiO3 layer during film deposition and reversible after-growth modulation in a thermal annealing process.</description><subject>Applied physics</subject><subject>Electron gas</subject><subject>Heterostructures</subject><subject>High temperature</subject><subject>Oxygen atoms</subject><subject>Strontium titanates</subject><subject>Substrates</subject><subject>Titanium dioxide</subject><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2022</creationdate><recordtype>article</recordtype><recordid>eNp90MtKAzEUBuAgCtbqwjcIuFKYNpfJXJZS1AqFiq3rIZmcaVOmkzHJFLrzHXxDn8SRii4EVz8HPv7DOQhdUjKiJOFjMSKUE5LkR2hASZpGnNLsGA0IITxKckFP0Zn3m34UjPMBaqZmtY62VpnahD2GGsrgbINX0mPT4IVjSzOPxwvXB8drCOCsD64rQ-cAQ7MyDYADjdUe78AFU8oaP3da1-A1NB9v70-2bcHhSnZ18OfopJK1h4vvHKKX-7vlZBrN5g-Pk9tZVLIsDVFK84RzxagmkKhYyLhPqQAIlBnPYqG5ShWJs6oUkCtFCcszBpKyROc0jfkQXR16W2dfO_Ch2NjONf3KgqUiTmjORNar64Mq-6O8g6pondlKty8oKb7eWYji-529vTlYX5ogg7HND95Z9wuLVlf_4b_Nn5z6hK0</recordid><startdate>20221212</startdate><enddate>20221212</enddate><creator>Zhang, T. T.</creator><creator>Li, J. Y.</creator><creator>Yang, J. F.</creator><creator>Gao, T. Y.</creator><creator>Sun, H. Y.</creator><creator>Gu, Z. B.</creator><creator>Deng, Y.</creator><creator>Nie, Y. F.</creator><general>American Institute of Physics</general><scope>AAYXX</scope><scope>CITATION</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope><orcidid>https://orcid.org/0000-0003-0304-3148</orcidid><orcidid>https://orcid.org/0000-0001-9998-1838</orcidid><orcidid>https://orcid.org/0000-0002-8041-8049</orcidid><orcidid>https://orcid.org/0000-0002-0742-6042</orcidid><orcidid>https://orcid.org/0000-0003-0107-7432</orcidid><orcidid>https://orcid.org/0000-0002-5603-2859</orcidid><orcidid>https://orcid.org/0000-0002-9948-9904</orcidid></search><sort><creationdate>20221212</creationdate><title>High-mobility electron gas in Sr2TiO4/SrTiO3 heterostructure engineered by vertical Ruddlesden–Popper faults</title><author>Zhang, T. T. ; Li, J. Y. ; Yang, J. F. ; Gao, T. Y. ; Sun, H. Y. ; Gu, Z. B. ; Deng, Y. ; Nie, Y. F.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c287t-719633b21d0e6b45a40e6abee0ec83845d3b7b048fc5e9bb102982ea126d91743</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2022</creationdate><topic>Applied physics</topic><topic>Electron gas</topic><topic>Heterostructures</topic><topic>High temperature</topic><topic>Oxygen atoms</topic><topic>Strontium titanates</topic><topic>Substrates</topic><topic>Titanium dioxide</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Zhang, T. T.</creatorcontrib><creatorcontrib>Li, J. Y.</creatorcontrib><creatorcontrib>Yang, J. F.</creatorcontrib><creatorcontrib>Gao, T. Y.</creatorcontrib><creatorcontrib>Sun, H. Y.</creatorcontrib><creatorcontrib>Gu, Z. B.</creatorcontrib><creatorcontrib>Deng, Y.</creatorcontrib><creatorcontrib>Nie, Y. F.</creatorcontrib><collection>CrossRef</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Zhang, T. T.</au><au>Li, J. Y.</au><au>Yang, J. F.</au><au>Gao, T. Y.</au><au>Sun, H. Y.</au><au>Gu, Z. B.</au><au>Deng, Y.</au><au>Nie, Y. F.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>High-mobility electron gas in Sr2TiO4/SrTiO3 heterostructure engineered by vertical Ruddlesden–Popper faults</atitle><jtitle>Applied physics letters</jtitle><date>2022-12-12</date><risdate>2022</risdate><volume>121</volume><issue>24</issue><issn>0003-6951</issn><eissn>1077-3118</eissn><coden>APPLAB</coden><abstract>High-mobility electron gases in SrTiO3-based heterostructures have been mainly synthesized on single TiO2 terminated SrTiO3 substrates. Here, we show a high-mobility electron gas observed in a Sr2TiO4/SrTiO3 heterostructure based on an untreated SrTiO3 substrate with mixed termination, showing the mobility value up to 28 000 cm2 V−1 s−1 at 2 K. SrO–SrO vertical Ruddlesden–Popper faults in the Sr2TiO4 film provide escape channels for oxygen atoms under high temperatures, enabling the as-grown tuning of oxygen vacancies in the SrTiO3 layer during film deposition and reversible after-growth modulation in a thermal annealing process.</abstract><cop>Melville</cop><pub>American Institute of Physics</pub><doi>10.1063/5.0130069</doi><tpages>6</tpages><orcidid>https://orcid.org/0000-0003-0304-3148</orcidid><orcidid>https://orcid.org/0000-0001-9998-1838</orcidid><orcidid>https://orcid.org/0000-0002-8041-8049</orcidid><orcidid>https://orcid.org/0000-0002-0742-6042</orcidid><orcidid>https://orcid.org/0000-0003-0107-7432</orcidid><orcidid>https://orcid.org/0000-0002-5603-2859</orcidid><orcidid>https://orcid.org/0000-0002-9948-9904</orcidid></addata></record>
fulltext	fulltext
identifier	ISSN: 0003-6951
ispartof	Applied physics letters, 2022-12, Vol.121 (24)
issn	0003-6951 1077-3118
language	eng
recordid	cdi_scitation_primary_10_1063_5_0130069
source	AIP Journals Complete; Alma/SFX Local Collection
subjects	Applied physics Electron gas Heterostructures High temperature Oxygen atoms Strontium titanates Substrates Titanium dioxide
title	High-mobility electron gas in Sr2TiO4/SrTiO3 heterostructure engineered by vertical Ruddlesden–Popper faults
url	https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-12T15%3A46%3A13IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_scita&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=High-mobility%20electron%20gas%20in%20Sr2TiO4/SrTiO3%20heterostructure%20engineered%20by%20vertical%20Ruddlesden%E2%80%93Popper%20faults&rft.jtitle=Applied%20physics%20letters&rft.au=Zhang,%20T.%20T.&rft.date=2022-12-12&rft.volume=121&rft.issue=24&rft.issn=0003-6951&rft.eissn=1077-3118&rft.coden=APPLAB&rft_id=info:doi/10.1063/5.0130069&rft_dat=%3Cproquest_scita%3E2754619258%3C/proquest_scita%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=2754619258&rft_id=info:pmid/&rfr_iscdi=true